Current-injection lasing in T-shaped GaAs/AlGaAs quantum-wire lasers

Shu Man Liu, Masahiro Yoshita, Makoto Okano, Hidefumi Akiyama, Loren N. Pfeiffer, Ken W. West

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Current-injection T-shaped GaAs/AlGaAs quantum wires lasers have been fabricated by a cleaved-edge overgrowth method with molecular beam epitaxy. Continuous single-mode operation at photon energy of ∼1.5 eV has been demonstrated between 30 K up to 70 K from laser diodes with high-reflectivity coating on both cleaved facets. The lowest threshold current (Ith) of 0.27 mA has been achieved at 30K, which are attributed to the high quality of the 2D confined structure and hence very low internal losses of the optical cavities.

Original languageEnglish (US)
Title of host publicationPhysics of Semiconductors - 28th International Conference on the Physics of Semiconductors, ICPS 2006, Part A and B
Pages861-862
Number of pages2
DOIs
StatePublished - 2007
Externally publishedYes
Event28th International Conference on the Physics of Semiconductors, ICPS 2006 - Vienna, Austria
Duration: Jul 24 2006Jul 28 2006

Publication series

NameAIP Conference Proceedings
Volume893
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Other

Other28th International Conference on the Physics of Semiconductors, ICPS 2006
Country/TerritoryAustria
CityVienna
Period7/24/067/28/06

All Science Journal Classification (ASJC) codes

  • General Physics and Astronomy

Keywords

  • Low threshold current
  • Quantum wire lasers

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