Current injection GaAs/AlGaAs quantum wire lasers fabricated by cleaved edge overgrowth

Werner Wegscheider; Loren Pfeiffer; Kenneth West; Ronald E. Leibenguth

doi:10.1063/1.112619

Current injection GaAs/AlGaAs quantum wire lasers fabricated by cleaved edge overgrowth

Werner Wegscheider, Loren Pfeiffer, Kenneth West, Ronald E. Leibenguth

Research output: Contribution to journal › Article › peer-review

59 Scopus citations

Abstract

We report the operation of quantum wire (QWR) semiconductor diode lasers fabricated by cleaved edge overgrowth. The active region in these index guided lasers consists of 15 QWRs formed at the right angle intersection of 15 [001] oriented quantum wells (QWs) each 7 nm wide, with a single 7-nm-wide QW grown along the [110] direction. Doping with Be and Si in the two orthogonal growth directions leads to the formation of a linear p-n junction in which the QWRs are embedded. Efficient current injection into the wires is demonstrated by the almost complete suppression of optical emission from QW states as well as by threshold currents as low as 0.4 mA for uncoated devices at 4.2 K.

Original language	English (US)
Pages (from-to)	2510-2512
Number of pages	3
Journal	Applied Physics Letters
Volume	65
Issue number	20
DOIs	https://doi.org/10.1063/1.112619
State	Published - 1994
Externally published	Yes

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.112619

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title = "Current injection GaAs/AlGaAs quantum wire lasers fabricated by cleaved edge overgrowth",

abstract = "We report the operation of quantum wire (QWR) semiconductor diode lasers fabricated by cleaved edge overgrowth. The active region in these index guided lasers consists of 15 QWRs formed at the right angle intersection of 15 [001] oriented quantum wells (QWs) each 7 nm wide, with a single 7-nm-wide QW grown along the [110] direction. Doping with Be and Si in the two orthogonal growth directions leads to the formation of a linear p-n junction in which the QWRs are embedded. Efficient current injection into the wires is demonstrated by the almost complete suppression of optical emission from QW states as well as by threshold currents as low as 0.4 mA for uncoated devices at 4.2 K.",

author = "Werner Wegscheider and Loren Pfeiffer and Kenneth West and Leibenguth, {Ronald E.}",

year = "1994",

doi = "10.1063/1.112619",

language = "English (US)",

volume = "65",

pages = "2510--2512",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "20",

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TY - JOUR

T1 - Current injection GaAs/AlGaAs quantum wire lasers fabricated by cleaved edge overgrowth

AU - Wegscheider, Werner

AU - Pfeiffer, Loren

AU - West, Kenneth

AU - Leibenguth, Ronald E.

PY - 1994

Y1 - 1994

N2 - We report the operation of quantum wire (QWR) semiconductor diode lasers fabricated by cleaved edge overgrowth. The active region in these index guided lasers consists of 15 QWRs formed at the right angle intersection of 15 [001] oriented quantum wells (QWs) each 7 nm wide, with a single 7-nm-wide QW grown along the [110] direction. Doping with Be and Si in the two orthogonal growth directions leads to the formation of a linear p-n junction in which the QWRs are embedded. Efficient current injection into the wires is demonstrated by the almost complete suppression of optical emission from QW states as well as by threshold currents as low as 0.4 mA for uncoated devices at 4.2 K.

AB - We report the operation of quantum wire (QWR) semiconductor diode lasers fabricated by cleaved edge overgrowth. The active region in these index guided lasers consists of 15 QWRs formed at the right angle intersection of 15 [001] oriented quantum wells (QWs) each 7 nm wide, with a single 7-nm-wide QW grown along the [110] direction. Doping with Be and Si in the two orthogonal growth directions leads to the formation of a linear p-n junction in which the QWRs are embedded. Efficient current injection into the wires is demonstrated by the almost complete suppression of optical emission from QW states as well as by threshold currents as low as 0.4 mA for uncoated devices at 4.2 K.

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DO - 10.1063/1.112619

M3 - Article

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SN - 0003-6951

VL - 65

SP - 2510

EP - 2512

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 20

ER -

Current injection GaAs/AlGaAs quantum wire lasers fabricated by cleaved edge overgrowth

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