Current Gain–Early Voltage Products in Heterojunction Bipolar Transistors with Nonuniform Base Bandgaps

E. J. Prinz; James C. Sturm

doi:10.1109/55.116947

Current Gain–Early Voltage Products in Heterojunction Bipolar Transistors with Nonuniform Base Bandgaps

E. J. Prinz, James C. Sturm

Research output: Contribution to journal › Article › peer-review

44 Scopus citations

Abstract

The trade-off between common-emitter current gain β and Early voltage VA in heterojunction bipolar transistors (HBT's) where the bandgap varies across the base has been studied. The Early voltage depends exponentially on the difference between the bandgap at the collector side of the base and the largest bandgap in the base, allowing very high Early voltages with only very thin narrow bandgap regions. Using Si/Si1-xGex/Si HBT's with a two-layer stepped base, βVA products of over 100 000 V have been achieved for devices with a cutoff frequency expected to be about 30 GHz.

Original language	English (US)
Pages (from-to)	661-663
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	12
Issue number	12
DOIs	https://doi.org/10.1109/55.116947
State	Published - Dec 1991

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/55.116947

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@article{27b1aada93694752a99484e22dede4e8,

title = "Current Gain–Early Voltage Products in Heterojunction Bipolar Transistors with Nonuniform Base Bandgaps",

abstract = "The trade-off between common-emitter current gain β and Early voltage VA in heterojunction bipolar transistors (HBT's) where the bandgap varies across the base has been studied. The Early voltage depends exponentially on the difference between the bandgap at the collector side of the base and the largest bandgap in the base, allowing very high Early voltages with only very thin narrow bandgap regions. Using Si/Si1-xGex/Si HBT's with a two-layer stepped base, βVA products of over 100 000 V have been achieved for devices with a cutoff frequency expected to be about 30 GHz.",

author = "Prinz, {E. J.} and Sturm, {James C.}",

note = "Funding Information: Manuscript received July 1, 1991; revised September 17, 1991. This work was supported by ONR under Contract “14-90-J-1316 and by an IBM fellowship award. The authors are with the Department of Electrical Engineering, Princeton University, Princeton, NJ 08544. IEEE Log Number 9104523.",

year = "1991",

month = dec,

doi = "10.1109/55.116947",

language = "English (US)",

volume = "12",

pages = "661--663",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "12",

}

TY - JOUR

T1 - Current Gain–Early Voltage Products in Heterojunction Bipolar Transistors with Nonuniform Base Bandgaps

AU - Prinz, E. J.

AU - Sturm, James C.

N1 - Funding Information: Manuscript received July 1, 1991; revised September 17, 1991. This work was supported by ONR under Contract “14-90-J-1316 and by an IBM fellowship award. The authors are with the Department of Electrical Engineering, Princeton University, Princeton, NJ 08544. IEEE Log Number 9104523.

PY - 1991/12

Y1 - 1991/12

N2 - The trade-off between common-emitter current gain β and Early voltage VA in heterojunction bipolar transistors (HBT's) where the bandgap varies across the base has been studied. The Early voltage depends exponentially on the difference between the bandgap at the collector side of the base and the largest bandgap in the base, allowing very high Early voltages with only very thin narrow bandgap regions. Using Si/Si1-xGex/Si HBT's with a two-layer stepped base, βVA products of over 100 000 V have been achieved for devices with a cutoff frequency expected to be about 30 GHz.

AB - The trade-off between common-emitter current gain β and Early voltage VA in heterojunction bipolar transistors (HBT's) where the bandgap varies across the base has been studied. The Early voltage depends exponentially on the difference between the bandgap at the collector side of the base and the largest bandgap in the base, allowing very high Early voltages with only very thin narrow bandgap regions. Using Si/Si1-xGex/Si HBT's with a two-layer stepped base, βVA products of over 100 000 V have been achieved for devices with a cutoff frequency expected to be about 30 GHz.

UR - http://www.scopus.com/inward/record.url?scp=0026403709&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0026403709&partnerID=8YFLogxK

U2 - 10.1109/55.116947

DO - 10.1109/55.116947

M3 - Article

AN - SCOPUS:0026403709

SN - 0741-3106

VL - 12

SP - 661

EP - 663

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 12

ER -

Current Gain–Early Voltage Products in Heterojunction Bipolar Transistors with Nonuniform Base Bandgaps

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