Current gain of amorphous silicon thin-film transistors above the cutoff frequency

Warren Rieutort-Louis, Liechao Huang, Yingzhe Hu, Josue Sanz-Robinson, Tiffany Moy, Yasmin Afsar, James Christopher Sturm, Naveen Verma, Sigurd Wagner

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Scopus citations


A key challenge for the development of high functionality thin-film large-area electronic systems is the operational frequencies achievable by Thin-Film Transistors (TFTs). These frequencies are typically limited by low transconductances and large (gate and overlap) capacitances. However, we have recently demonstrated energy-harvesting and communication systems, as shown in Fig. 1, utilizing thin-film circuit topologies that allow operation at or above the TFT cutoff frequency (ft) [1,2] by using inductors to 'resonate out' the effect of TFT capacitances. Measurement and modelling of current gain near and above ft is thus critical (as opposed to conventional studies of current gain below ft). In this paper we (1) show above-ft measurements for standard bottom-gate amorphous silicon (a-Si) TFTs and self-aligned bottom-gate a-Si TFTs and (2) illustrate how large TFT gate-drain capacitances lead to a slow current-gain roll-off at frequencies above ft.

Original languageEnglish (US)
Title of host publication72nd Device Research Conference, DRC 2014 - Conference Digest
PublisherInstitute of Electrical and Electronics Engineers Inc.
Number of pages2
ISBN (Print)9781479954056
StatePublished - Jan 1 2014
Event72nd Device Research Conference, DRC 2014 - Santa Barbara, CA, United States
Duration: Jun 22 2014Jun 25 2014

Publication series

NameDevice Research Conference - Conference Digest, DRC
ISSN (Print)1548-3770


Other72nd Device Research Conference, DRC 2014
Country/TerritoryUnited States
CitySanta Barbara, CA

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering


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