Current gain-Early voltage products in heterojunction bipolar transistors with nonuniform base bandgaps

E. J. Prinz; James Christopher Sturm

Current gain-Early voltage products in heterojunction bipolar transistors with nonuniform base bandgaps

Research output: Contribution to journal › Article

Abstract

The tradeoff between common-emitter current gain (β) and Early voltage (V_A) in heterojunction bipolar transistors (HBTs) where the bandgap varies across the base has been studied. The Early voltage depends exponentially on the difference between the bandgap at the collector side of the base and the largest bandgap in the base, allowing very high Early voltages with only very thin narrow bandgap regions. Using Si/Si_1-xGe_x/Si HBTs with a two-layer stepped base, βV_A products of over 100,000 V have been achieved for devices with a cutoff frequency expected to be about 30 GHz.

Original language	English (US)
Pages (from-to)	661-663
Number of pages	3
Journal	Electron device letters
Volume	12
Issue number	12
State	Published - Dec 1 1991

All Science Journal Classification (ASJC) codes

Engineering(all)
Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

Access to Document

Fingerprint Dive into the research topics of 'Current gain-Early voltage products in heterojunction bipolar transistors with nonuniform base bandgaps'. Together they form a unique fingerprint.

Cite this

@article{27b1aada93694752a99484e22dede4e8,

title = "Current gain-Early voltage products in heterojunction bipolar transistors with nonuniform base bandgaps",

abstract = "The tradeoff between common-emitter current gain (β) and Early voltage (VA) in heterojunction bipolar transistors (HBTs) where the bandgap varies across the base has been studied. The Early voltage depends exponentially on the difference between the bandgap at the collector side of the base and the largest bandgap in the base, allowing very high Early voltages with only very thin narrow bandgap regions. Using Si/Si1-xGex/Si HBTs with a two-layer stepped base, βVA products of over 100,000 V have been achieved for devices with a cutoff frequency expected to be about 30 GHz.",

author = "Prinz, {E. J.} and Sturm, {James Christopher}",

year = "1991",

month = dec,

day = "1",

language = "English (US)",

volume = "12",

pages = "661--663",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "12",

}

TY - JOUR

T1 - Current gain-Early voltage products in heterojunction bipolar transistors with nonuniform base bandgaps

AU - Prinz, E. J.

AU - Sturm, James Christopher

PY - 1991/12/1

Y1 - 1991/12/1

N2 - The tradeoff between common-emitter current gain (β) and Early voltage (VA) in heterojunction bipolar transistors (HBTs) where the bandgap varies across the base has been studied. The Early voltage depends exponentially on the difference between the bandgap at the collector side of the base and the largest bandgap in the base, allowing very high Early voltages with only very thin narrow bandgap regions. Using Si/Si1-xGex/Si HBTs with a two-layer stepped base, βVA products of over 100,000 V have been achieved for devices with a cutoff frequency expected to be about 30 GHz.

AB - The tradeoff between common-emitter current gain (β) and Early voltage (VA) in heterojunction bipolar transistors (HBTs) where the bandgap varies across the base has been studied. The Early voltage depends exponentially on the difference between the bandgap at the collector side of the base and the largest bandgap in the base, allowing very high Early voltages with only very thin narrow bandgap regions. Using Si/Si1-xGex/Si HBTs with a two-layer stepped base, βVA products of over 100,000 V have been achieved for devices with a cutoff frequency expected to be about 30 GHz.

UR - http://www.scopus.com/inward/record.url?scp=0026403709&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0026403709&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0026403709

VL - 12

SP - 661

EP - 663

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

SN - 0741-3106

IS - 12

ER -