Current gain-Early voltage products in heterojunction bipolar transistors with nonuniform base bandgaps

Research output: Contribution to journalArticle

39 Scopus citations

Abstract

The tradeoff between common-emitter current gain (β) and Early voltage (VA) in heterojunction bipolar transistors (HBTs) where the bandgap varies across the base has been studied. The Early voltage depends exponentially on the difference between the bandgap at the collector side of the base and the largest bandgap in the base, allowing very high Early voltages with only very thin narrow bandgap regions. Using Si/Si1-xGex/Si HBTs with a two-layer stepped base, βVA products of over 100,000 V have been achieved for devices with a cutoff frequency expected to be about 30 GHz.

Original languageEnglish (US)
Pages (from-to)661-663
Number of pages3
JournalElectron device letters
Volume12
Issue number12
StatePublished - Dec 1 1991

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Fingerprint Dive into the research topics of 'Current gain-Early voltage products in heterojunction bipolar transistors with nonuniform base bandgaps'. Together they form a unique fingerprint.

Cite this