Current gain-Early voltage products in heterojunction bipolar transistors with nonuniform base bandgaps

E. J. Prinz; James Christopher Sturm

Current gain-Early voltage products in heterojunction bipolar transistors with nonuniform base bandgaps

Research output: Contribution to journal › Article › peer-review

Abstract

The tradeoff between common-emitter current gain (β) and Early voltage (V_A) in heterojunction bipolar transistors (HBTs) where the bandgap varies across the base has been studied. The Early voltage depends exponentially on the difference between the bandgap at the collector side of the base and the largest bandgap in the base, allowing very high Early voltages with only very thin narrow bandgap regions. Using Si/Si_1-xGe_x/Si HBTs with a two-layer stepped base, βV_A products of over 100,000 V have been achieved for devices with a cutoff frequency expected to be about 30 GHz.

Original language	English (US)
Pages (from-to)	661-663
Number of pages	3
Journal	Electron device letters
Volume	12
Issue number	12
State	Published - Dec 1 1991

All Science Journal Classification (ASJC) codes

Engineering(all)
Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

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title = "Current gain-Early voltage products in heterojunction bipolar transistors with nonuniform base bandgaps",

abstract = "The tradeoff between common-emitter current gain (β) and Early voltage (VA) in heterojunction bipolar transistors (HBTs) where the bandgap varies across the base has been studied. The Early voltage depends exponentially on the difference between the bandgap at the collector side of the base and the largest bandgap in the base, allowing very high Early voltages with only very thin narrow bandgap regions. Using Si/Si1-xGex/Si HBTs with a two-layer stepped base, βVA products of over 100,000 V have been achieved for devices with a cutoff frequency expected to be about 30 GHz.",

author = "Prinz, {E. J.} and Sturm, {James Christopher}",

year = "1991",

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N2 - The tradeoff between common-emitter current gain (β) and Early voltage (VA) in heterojunction bipolar transistors (HBTs) where the bandgap varies across the base has been studied. The Early voltage depends exponentially on the difference between the bandgap at the collector side of the base and the largest bandgap in the base, allowing very high Early voltages with only very thin narrow bandgap regions. Using Si/Si1-xGex/Si HBTs with a two-layer stepped base, βVA products of over 100,000 V have been achieved for devices with a cutoff frequency expected to be about 30 GHz.

AB - The tradeoff between common-emitter current gain (β) and Early voltage (VA) in heterojunction bipolar transistors (HBTs) where the bandgap varies across the base has been studied. The Early voltage depends exponentially on the difference between the bandgap at the collector side of the base and the largest bandgap in the base, allowing very high Early voltages with only very thin narrow bandgap regions. Using Si/Si1-xGex/Si HBTs with a two-layer stepped base, βVA products of over 100,000 V have been achieved for devices with a cutoff frequency expected to be about 30 GHz.

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