Current fluctuations in double-barrier quantum well resonant tunneling diodes

Yayun Lin, Arthur D. Van Rheenen, Stephen Y. Chou

Research output: Contribution to journalArticle

10 Scopus citations

Abstract

The measurements of the spectral intensity of the current fluctuations in double-barrier quantum well resonant tunneling diodes as a function of temperature and bias current are reported. Two types of devices were studied: one with AlAs barriers and GaAs well and contact regions, and the other has Al0.3Ga0.7As barriers. The frequency range covered is 1 Hz-100 kHz and the temperature range is 78-400 K. The noise spectra are decomposed in a 1/f part, resulting in the magnitude of the 1/f noise, and contributions due to carrier trapping, resulting in the activation energies of the traps. It is found that a reduction of the Al content in the barrier material reduces the number of traps and further that the magnitude of the 1/f noise is practically independent of the temperature and of the Al content of the barrier.

Original languageEnglish (US)
Pages (from-to)1105-1107
Number of pages3
JournalApplied Physics Letters
Volume59
Issue number9
DOIs
StatePublished - Dec 1 1991
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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