Current fluctuations in double-barrier quantum well resonant tunneling diodes

Yayun Lin; Arthur D. Van Rheenen; Stephen Y. Chou

doi:10.1063/1.106358

Current fluctuations in double-barrier quantum well resonant tunneling diodes

Yayun Lin, Arthur D. Van Rheenen, Stephen Y. Chou

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

The measurements of the spectral intensity of the current fluctuations in double-barrier quantum well resonant tunneling diodes as a function of temperature and bias current are reported. Two types of devices were studied: one with AlAs barriers and GaAs well and contact regions, and the other has Al_0.3Ga_0.7As barriers. The frequency range covered is 1 Hz-100 kHz and the temperature range is 78-400 K. The noise spectra are decomposed in a 1/f part, resulting in the magnitude of the 1/f noise, and contributions due to carrier trapping, resulting in the activation energies of the traps. It is found that a reduction of the Al content in the barrier material reduces the number of traps and further that the magnitude of the 1/f noise is practically independent of the temperature and of the Al content of the barrier.

Original language	English (US)
Pages (from-to)	1105-1107
Number of pages	3
Journal	Applied Physics Letters
Volume	59
Issue number	9
DOIs	https://doi.org/10.1063/1.106358
State	Published - 1991
Externally published	Yes

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.106358

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@article{30526182acbf4e75ba6b49393214edd9,

title = "Current fluctuations in double-barrier quantum well resonant tunneling diodes",

abstract = "The measurements of the spectral intensity of the current fluctuations in double-barrier quantum well resonant tunneling diodes as a function of temperature and bias current are reported. Two types of devices were studied: one with AlAs barriers and GaAs well and contact regions, and the other has Al0.3Ga0.7As barriers. The frequency range covered is 1 Hz-100 kHz and the temperature range is 78-400 K. The noise spectra are decomposed in a 1/f part, resulting in the magnitude of the 1/f noise, and contributions due to carrier trapping, resulting in the activation energies of the traps. It is found that a reduction of the Al content in the barrier material reduces the number of traps and further that the magnitude of the 1/f noise is practically independent of the temperature and of the Al content of the barrier.",

author = "Yayun Lin and {Van Rheenen}, {Arthur D.} and Chou, {Stephen Y.}",

year = "1991",

doi = "10.1063/1.106358",

language = "English (US)",

volume = "59",

pages = "1105--1107",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "9",

}

TY - JOUR

T1 - Current fluctuations in double-barrier quantum well resonant tunneling diodes

AU - Lin, Yayun

AU - Van Rheenen, Arthur D.

AU - Chou, Stephen Y.

PY - 1991

Y1 - 1991

N2 - The measurements of the spectral intensity of the current fluctuations in double-barrier quantum well resonant tunneling diodes as a function of temperature and bias current are reported. Two types of devices were studied: one with AlAs barriers and GaAs well and contact regions, and the other has Al0.3Ga0.7As barriers. The frequency range covered is 1 Hz-100 kHz and the temperature range is 78-400 K. The noise spectra are decomposed in a 1/f part, resulting in the magnitude of the 1/f noise, and contributions due to carrier trapping, resulting in the activation energies of the traps. It is found that a reduction of the Al content in the barrier material reduces the number of traps and further that the magnitude of the 1/f noise is practically independent of the temperature and of the Al content of the barrier.

AB - The measurements of the spectral intensity of the current fluctuations in double-barrier quantum well resonant tunneling diodes as a function of temperature and bias current are reported. Two types of devices were studied: one with AlAs barriers and GaAs well and contact regions, and the other has Al0.3Ga0.7As barriers. The frequency range covered is 1 Hz-100 kHz and the temperature range is 78-400 K. The noise spectra are decomposed in a 1/f part, resulting in the magnitude of the 1/f noise, and contributions due to carrier trapping, resulting in the activation energies of the traps. It is found that a reduction of the Al content in the barrier material reduces the number of traps and further that the magnitude of the 1/f noise is practically independent of the temperature and of the Al content of the barrier.

UR - http://www.scopus.com/inward/record.url?scp=7544226704&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=7544226704&partnerID=8YFLogxK

U2 - 10.1063/1.106358

DO - 10.1063/1.106358

M3 - Article

AN - SCOPUS:7544226704

SN - 0003-6951

VL - 59

SP - 1105

EP - 1107

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 9

ER -

Current fluctuations in double-barrier quantum well resonant tunneling diodes

Abstract

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