Crystallographic etching of few-layer graphene

Sujit S. Datta, Douglas R. Strachan, Samuel M. Khamis, A. T.Charlie Johnson

Research output: Contribution to journalArticle

453 Scopus citations

Abstract

We demonstrate a method by which few-layer graphene samples can be etched along crystallographic axes by thermally activated metallic nanoparticles. The technique results in long (>1 μm) crystallographic edges etched through to the insulating substrate, making the process potentially useful for atomically precise graphene device fabrication. This advance could enable atomically precise construction of integrated circuits from single graphene sheets with a wide range of technological applications.

Original languageEnglish (US)
Pages (from-to)1912-1915
Number of pages4
JournalNano Letters
Volume8
Issue number7
DOIs
StatePublished - Jul 2008
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering

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  • Cite this

    Datta, S. S., Strachan, D. R., Khamis, S. M., & Johnson, A. T. C. (2008). Crystallographic etching of few-layer graphene. Nano Letters, 8(7), 1912-1915. https://doi.org/10.1021/nl080583r