Crystal growth and quantum oscillations in the topological chiral semimetal CoSi

Xitong Xu, Xirui Wang, Tyler A. Cochran, Daniel S. Sanchez, Guoqing Chang, Ilya Belopolski, Guangqiang Wang, Yiyuan Liu, Hung Ju Tien, Xin Gui, Weiwei Xie, M. Zahid Hasan, Tay Rong Chang, Shuang Jia

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Abstract

We survey the electrical transport properties of single-crystalline, topological chiral semimetal CoSi grown via different methods. High-quality CoSi single crystals were found in the growth from a tellurium solution. The sample's high carrier mobility enables us to observe quantum oscillations (QOs) in its thermoelectrical signals. Our analysis of QOs reveals two spherical Fermi surfaces around the R point in its Brillouin zone corner. The extracted Berry phases of these electron orbits are consistent with the -2 chiral charge as reported in density functional theory (DFT) calculations. A detailed analysis of the QOs reveals that the spin-orbit-coupling-induced band splitting is less than 2 meV near the Fermi level, one order of magnitude smaller than our DFT calculation. We also report a large phonon-drag-induced Nernst effect in CoSi at intermediate temperatures.

Original languageEnglish (US)
Article number045104
JournalPhysical Review B
Volume100
Issue number4
DOIs
StatePublished - Jul 8 2019

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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    Xu, X., Wang, X., Cochran, T. A., Sanchez, D. S., Chang, G., Belopolski, I., Wang, G., Liu, Y., Tien, H. J., Gui, X., Xie, W., Hasan, M. Z., Chang, T. R., & Jia, S. (2019). Crystal growth and quantum oscillations in the topological chiral semimetal CoSi. Physical Review B, 100(4), [045104]. https://doi.org/10.1103/PhysRevB.100.045104