We report on the characterization of near-ultraviolet high-density silicon photomultiplier (SiPM) developed at Fondazione Bruno Kessler (FBK) at cryogenic temperature. A dedicated setup was built to measure the primary dark noise and correlated noise of the SiPMs between 40 and 300 K. Moreover, an analysis program and data acquisition system were developed to allow the precise characterization of these parameters, some of which can vary up to seven orders of magnitude between room temperature and 40 K. We demonstrate that it is possible to operate the FBK near-ultraviolet high density SiPMs at temperatures lower than 100 K with a dark rate below 0.01 cps/mm2 and total correlated noise probability below 35% at an overvoltage of 6 V. These results are relevant for the development of future cryogenic particle detectors using SiPMs as photosensors.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering
- avalanche photodiode
- dark noise
- silicon photomultiplier (SiPM)