@inproceedings{848eae9da6fa44e4ad9270463640a203,
title = "Crossover from diffusive to ballistic transport as a function of frequency in a two dimensional electron gas",
abstract = "We measure for the first time the crossover from diffusive (ωτm<1) to ballistic (ωτm >1) transport as a function of frequency (dc to 10 GHz) in a dc contacted 2DEG. (τm, is the momentum scattering time.) Here, ballistic transport is defined as electron transport in the limit (ωτm >1); the electrons move without scattering (ballisticatly) between electric field cycles. Diffusive transport can be defined as the lower frequency range (ωτm <1); in the diffusive limit there are many scattering events between electric field cycles. The measurements presented here are for ungated geometries, but the motivation is to move later to gated geometries. In gated geometries in the limit (ωτm >l), ballistic effects can be used for a new class of devices not limited by transit time effects1.",
author = "Sungmu Rang and Burke, {Peter John} and Pfeiffer, {L. N.} and West, {K. W.}",
year = "2003",
doi = "10.1109/ISDRS.2003.1272059",
language = "English (US)",
series = "2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "198--199",
booktitle = "2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings",
address = "United States",
note = "International Semiconductor Device Research Symposium, ISDRS 2003 ; Conference date: 10-12-2003 Through 12-12-2003",
}