Abstract
A critical scaling of the real and imaginary parts of the low-frequency ac conductance of insulating phosphorus-doped silicon near the metal-insulator transition has been observed. The results are interpreted as evidence of an electron glass, i.e., glasslike behavior, intimately connected with the scaling description of the transition, in which Coulomb interactions play a significant role.
Original language | English (US) |
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Pages (from-to) | 1896-1899 |
Number of pages | 4 |
Journal | Physical review letters |
Volume | 51 |
Issue number | 20 |
DOIs | |
State | Published - 1983 |
Externally published | Yes |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)