Critical exponent in the fractional quantum Hall effect

L. Engel; H. P. Wei; D. C. Tsui; M. Shayegan

doi:10.1016/0039-6028(90)90820-X

Critical exponent in the fractional quantum Hall effect

L. Engel, H. P. Wei, D. C. Tsui, M. Shayegan

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Abstract

We report the observation of a universal critical exponent in the fractional quantum Hall effect (FQHE) from a study of the temperature (T) dependent electron transport in between Landau level filling factors v = 2 5 and v = 1 3, over a T range from 1.2 K to 22 mK. in an AlGaAs-GaAs heterostructure. Specifically, the maximum value of dp_xy dB and the width of p_xx show the same power law dependence on T, i.e. ~T^-K. The critical exponent K=0.43 ± 0.02.This power law dependence is the same as that obtained in the integral quantum Hall effect (IQHE) [Wei et al., Phys. Rev. Lett. 61 (1988) 1294], in analogy to which our result indicates the existence of a divergent correlation length for the wavefunction of the quasi-particles in the FQHE for 1 3 < v < 2 5. The localization to delocalization transition can be characterized by a universal critical exponent, k, in both the IQHE and the FQHE.

Original language	English (US)
Pages (from-to)	13-15
Number of pages	3
Journal	Surface Science
Volume	229
Issue number	1-3
DOIs	https://doi.org/10.1016/0039-6028(90)90820-X
State	Published - Apr 2 1990

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Materials Chemistry

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10.1016/0039-6028(90)90820-X

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title = "Critical exponent in the fractional quantum Hall effect",

abstract = "We report the observation of a universal critical exponent in the fractional quantum Hall effect (FQHE) from a study of the temperature (T) dependent electron transport in between Landau level filling factors v = 2 5 and v = 1 3, over a T range from 1.2 K to 22 mK. in an AlGaAs-GaAs heterostructure. Specifically, the maximum value of dpxy dB and the width of pxx show the same power law dependence on T, i.e. ~T-K. The critical exponent K=0.43 ± 0.02.This power law dependence is the same as that obtained in the integral quantum Hall effect (IQHE) [Wei et al., Phys. Rev. Lett. 61 (1988) 1294], in analogy to which our result indicates the existence of a divergent correlation length for the wavefunction of the quasi-particles in the FQHE for 1 3 < v < 2 5. The localization to delocalization transition can be characterized by a universal critical exponent, k, in both the IQHE and the FQHE.",

author = "L. Engel and Wei, {H. P.} and Tsui, {D. C.} and M. Shayegan",

note = "Funding Information: This work is supported in part by the NSF, grants DMR-8719694 and DMR-8705002, and by the ONR, grant NO00 14-89-J-1567.",

year = "1990",

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doi = "10.1016/0039-6028(90)90820-X",

language = "English (US)",

volume = "229",

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TY - JOUR

T1 - Critical exponent in the fractional quantum Hall effect

AU - Engel, L.

AU - Wei, H. P.

AU - Tsui, D. C.

AU - Shayegan, M.

N1 - Funding Information: This work is supported in part by the NSF, grants DMR-8719694 and DMR-8705002, and by the ONR, grant NO00 14-89-J-1567.

PY - 1990/4/2

Y1 - 1990/4/2

N2 - We report the observation of a universal critical exponent in the fractional quantum Hall effect (FQHE) from a study of the temperature (T) dependent electron transport in between Landau level filling factors v = 2 5 and v = 1 3, over a T range from 1.2 K to 22 mK. in an AlGaAs-GaAs heterostructure. Specifically, the maximum value of dpxy dB and the width of pxx show the same power law dependence on T, i.e. ~T-K. The critical exponent K=0.43 ± 0.02.This power law dependence is the same as that obtained in the integral quantum Hall effect (IQHE) [Wei et al., Phys. Rev. Lett. 61 (1988) 1294], in analogy to which our result indicates the existence of a divergent correlation length for the wavefunction of the quasi-particles in the FQHE for 1 3 < v < 2 5. The localization to delocalization transition can be characterized by a universal critical exponent, k, in both the IQHE and the FQHE.

AB - We report the observation of a universal critical exponent in the fractional quantum Hall effect (FQHE) from a study of the temperature (T) dependent electron transport in between Landau level filling factors v = 2 5 and v = 1 3, over a T range from 1.2 K to 22 mK. in an AlGaAs-GaAs heterostructure. Specifically, the maximum value of dpxy dB and the width of pxx show the same power law dependence on T, i.e. ~T-K. The critical exponent K=0.43 ± 0.02.This power law dependence is the same as that obtained in the integral quantum Hall effect (IQHE) [Wei et al., Phys. Rev. Lett. 61 (1988) 1294], in analogy to which our result indicates the existence of a divergent correlation length for the wavefunction of the quasi-particles in the FQHE for 1 3 < v < 2 5. The localization to delocalization transition can be characterized by a universal critical exponent, k, in both the IQHE and the FQHE.

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U2 - 10.1016/0039-6028(90)90820-X

DO - 10.1016/0039-6028(90)90820-X

M3 - Article

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VL - 229

SP - 13

EP - 15

JO - Surface Science

JF - Surface Science

IS - 1-3

ER -

Critical exponent in the fractional quantum Hall effect

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