Coverage dependent surface photovoltage induced by synchrotron radiation at metal/GaAs interfaces

Keyphrases

• Gallium Arsenide 100%
• Synchrotron Radiation 100%
• Coverage-dependent 100%
• Surface Photovoltage 100%
• Band Bending 33%
• Low Temperature 16%
• Room Temperature 16%
• Difference Measurement 16%
• Contact Potential Difference 16%
• Overlayer 16%
• Highly Doped 16%
• Radiation Effects 16%
• Coverage Dependence 16%
• Metal Coverage 16%
• Charge Leakage 16%
• Metal Temperature 16%
• Metal-dependent 16%

Physics

• Synchrotron Radiation 100%
• Photovoltage 100%
• Room Temperature 16%
• Time Constant 16%

Material Science

• Gallium Arsenide 100%
• Monolayers 33%