Abstract
Contact potential difference measurements of synchrotron radiation-induced surface photovoltage (SPV) are performed on GaAs(llO) as a function of metal coverage and temperature. On low doped n-samples the low temperature SPV (0.55 eV) is almost equal to the total band bending at subrnonolayer coverage and discharges with a time constant of hours. Above a monolayer, the rate of discharging increases dramatically, emphasizing the role of charge leakage through the overlayer. The room temperature SPV is considerably smaller (0.2 eV) and its coverage dependence does not correlate with that of band bending. A metal-dependent enhancement of SPV is found. No significant SPV is detected on highly doped p-GaAs.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 898-901 |
| Number of pages | 4 |
| Journal | Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films |
| Volume | 9 |
| Issue number | 3 |
| DOIs | |
| State | Published - May 1991 |
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films