Coverage dependent surface photovoltage induced by synchrotron radiation at metal/GaAs interfaces

D. Mao, Antoine Kahn, M. Marsi, G. Margaritondo

Research output: Contribution to journalArticle

12 Scopus citations

Abstract

Contact potential difference measurements of synchrotron radiation-induced surface photovoltage (SPV) are performed on GaAs(llO) as a function of metal coverage and temperature. On low doped n-samples the low temperature SPV (0.55 eV) is almost equal to the total band bending at subrnonolayer coverage and discharges with a time constant of hours. Above a monolayer, the rate of discharging increases dramatically, emphasizing the role of charge leakage through the overlayer. The room temperature SPV is considerably smaller (0.2 eV) and its coverage dependence does not correlate with that of band bending. A metal-dependent enhancement of SPV is found. No significant SPV is detected on highly doped p-GaAs.

Original languageEnglish (US)
Pages (from-to)898-901
Number of pages4
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume9
Issue number3
DOIs
StatePublished - Jan 1 1991

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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