Counterflow measurements in strongly correlated GaAs hole bilayers: Evidence for electron-hole pairing

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Abstract

Magnetotransport measurement on an independently contacted GaAs bilayer hole system in various geometries for the current injection and voltage detection were discussed. At low temperature the longitudinal and Hall counterflow resistance tend to vanish in the quantum Hall state at total bilayer filling ν=1. The current leakage were found to be an important aspects of the drag and counterflow measurements between the layers. It was observed that counterflow Hall resistance decrease much more strongly than the longitudinal resistance as the temperature reduced.

Original languageEnglish (US)
Pages (from-to)36802-36801
Number of pages2
JournalPhysical review letters
Volume93
Issue number3
DOIs
StatePublished - Jul 16 2004

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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