Coulomb drag near the metal-insulator transition in two dimensions

R. Pillarisetty, Hwayong Noh, E. Tutuc, E. P. De Poortere, K. Lai, D. C. Tsui, M. Shayegan

Research output: Contribution to journalArticlepeer-review

22 Scopus citations


We studied the drag resistivity between dilute two-dimensional hole systems, near the apparent metal-insulator transition. We find the deviations from the T 2 dependence of the drag to be independent of layer spacing and correlated with the metalliclike behavior in the single-layer resistivity, suggesting they both arise from the same origin. In addition, layer-spacing dependence measurements suggest that while the screening properties of the system remain relatively independent of temperature, they weaken significantly as the carrier density is reduced. Finally, we demonstrate that the drag itself significantly enhances the metallic T dependence in the single-layer resistivity.

Original languageEnglish (US)
Article number115307
JournalPhysical Review B - Condensed Matter and Materials Physics
Issue number11
StatePublished - Mar 15 2005

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics


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