Correlation of plasma-induced charging voltage measured in-situ by microelectromechanical sensors with device degradation

Kiran Pangal; J. C. Sturm

Correlation of plasma-induced charging voltage measured in-situ by microelectromechanical sensors with device degradation

Research output: Contribution to conference › Paper › peer-review

Abstract

The plasma-induced charging of surfaces during semiconductor processing has been measured noninvasively and in situ using microelectromechanical charge sensing devices. We have shown that this sensor reading can be used to predict degradation in Metal-Oxide-Semiconductor (MOS) capacitors. The charging voltage scales with oxide thickness and is found to be a strong function of input rf power, chamber pressure and type of gas used in the plasma.

Original language	English (US)
Pages	203-206
Number of pages	4
State	Published - 1997
Event	Proceedings of the 1997 2nd International Symposium on Plasma Process-Induced Damage - Monterey, CA, USA Duration: May 13 1997 → May 14 1997

Other

Other	Proceedings of the 1997 2nd International Symposium on Plasma Process-Induced Damage
City	Monterey, CA, USA
Period	5/13/97 → 5/14/97

All Science Journal Classification (ASJC) codes

General Engineering

Cite this

@conference{b1d0c3bf79264c29b370aba158ad9936,

title = "Correlation of plasma-induced charging voltage measured in-situ by microelectromechanical sensors with device degradation",

abstract = "The plasma-induced charging of surfaces during semiconductor processing has been measured noninvasively and in situ using microelectromechanical charge sensing devices. We have shown that this sensor reading can be used to predict degradation in Metal-Oxide-Semiconductor (MOS) capacitors. The charging voltage scales with oxide thickness and is found to be a strong function of input rf power, chamber pressure and type of gas used in the plasma.",

author = "Kiran Pangal and Sturm, {J. C.}",

year = "1997",

language = "English (US)",

pages = "203--206",

note = "Proceedings of the 1997 2nd International Symposium on Plasma Process-Induced Damage ; Conference date: 13-05-1997 Through 14-05-1997",

}

TY - CONF

T1 - Correlation of plasma-induced charging voltage measured in-situ by microelectromechanical sensors with device degradation

AU - Pangal, Kiran

AU - Sturm, J. C.

PY - 1997

Y1 - 1997

N2 - The plasma-induced charging of surfaces during semiconductor processing has been measured noninvasively and in situ using microelectromechanical charge sensing devices. We have shown that this sensor reading can be used to predict degradation in Metal-Oxide-Semiconductor (MOS) capacitors. The charging voltage scales with oxide thickness and is found to be a strong function of input rf power, chamber pressure and type of gas used in the plasma.

AB - The plasma-induced charging of surfaces during semiconductor processing has been measured noninvasively and in situ using microelectromechanical charge sensing devices. We have shown that this sensor reading can be used to predict degradation in Metal-Oxide-Semiconductor (MOS) capacitors. The charging voltage scales with oxide thickness and is found to be a strong function of input rf power, chamber pressure and type of gas used in the plasma.

UR - http://www.scopus.com/inward/record.url?scp=0030697560&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0030697560&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0030697560

SP - 203

EP - 206

T2 - Proceedings of the 1997 2nd International Symposium on Plasma Process-Induced Damage

Y2 - 13 May 1997 through 14 May 1997

ER -

Correlation of plasma-induced charging voltage measured in-situ by microelectromechanical sensors with device degradation

Abstract

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