Correlation of plasma-induced charging voltage measured in-situ by microelectromechanical sensors with device degradation

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

The plasma-induced charging of surfaces during semiconductor processing has been measured noninvasively and in situ using microelectromechanical charge sensing devices. We have shown that this sensor reading can be used to predict degradation in Metal-Oxide-Semiconductor (MOS) capacitors. The charging voltage scales with oxide thickness and is found to be a strong function of input rf power, chamber pressure and type of gas used in the plasma.

Original languageEnglish (US)
Title of host publicationInternational Symposium on Plasma Process-Induced Damage, P2ID, Proceedings
PublisherIEEE
Pages203-206
Number of pages4
StatePublished - Jan 1 1997
EventProceedings of the 1997 2nd International Symposium on Plasma Process-Induced Damage - Monterey, CA, USA
Duration: May 13 1997May 14 1997

Other

OtherProceedings of the 1997 2nd International Symposium on Plasma Process-Induced Damage
CityMonterey, CA, USA
Period5/13/975/14/97

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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    Pangal, K., & Sturm, J. C. (1997). Correlation of plasma-induced charging voltage measured in-situ by microelectromechanical sensors with device degradation. In International Symposium on Plasma Process-Induced Damage, P2ID, Proceedings (pp. 203-206). IEEE.