Abstract
High-quality single crystals of WTe2 were grown using a Te flux followed by a cleaning step involving self-vapor transport. The method is reproducible and yields consistently higher-quality single crystals than are typically obtained via halide-assisted vapor transport methods. Magnetoresistance (MR) values at 9 tesla and 2 kelvin as high as 1.75 million %, nearly an order of magnitude higher than previously reported for this material, were obtained on crystals with residual resistivity ratio (RRR) of approximately 1250. The MR follows a near B 2 law and, assuming a semiclassical model, the average carrier mobility for the highest-quality crystal was found to be at 2 K. A correlation of RRR, MR ratio and average carrier mobility is found with the cooling rate during the flux growth.
Original language | English (US) |
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Article number | 67002 |
Journal | EPL |
Volume | 110 |
Issue number | 6 |
DOIs | |
State | Published - Jun 1 2015 |
All Science Journal Classification (ASJC) codes
- General Physics and Astronomy