Correlation between oligothiophene thin film transistor morphology and vapor responses

L. Torsi, A. J. Lovinger, B. Crone, T. Someya, A. Dodabalapur, H. E. Katz, A. Gelperin

Research output: Contribution to journalArticle

108 Scopus citations

Abstract

Oligothiophene thin film transistors have recently been shown to respond to organic vapors, suggesting possible applicability in the field of olfactory sensor arrays. Here, we present a study of the correlation between the morphological structure of the active semiconductor thin film and the response to the vapor. The study was carried out by combining the measurement of the transient source-drain current of the transistor under vapor flow with the morphological characterization of the organic thin films by transmission electron microscopy.

Original languageEnglish (US)
Pages (from-to)12563-12568
Number of pages6
JournalJournal of Physical Chemistry B
Volume106
Issue number48
DOIs
StatePublished - Dec 5 2002
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Physical and Theoretical Chemistry
  • Surfaces, Coatings and Films
  • Materials Chemistry

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    Torsi, L., Lovinger, A. J., Crone, B., Someya, T., Dodabalapur, A., Katz, H. E., & Gelperin, A. (2002). Correlation between oligothiophene thin film transistor morphology and vapor responses. Journal of Physical Chemistry B, 106(48), 12563-12568. https://doi.org/10.1021/jp021473q