CORRELATION BETWEEN ELECTRICAL AND STRUCTURAL CHARACTERISTICS OF EPITAXIAL CaF//2 ON Si.

The authors recently reported the first fabrication of metal-epitaxial insulator-semiconductor field-effect transistors (MEISFETs) which make use of CaF//2 as the gate insulator on a Si(100) substrate. The authors have subsequently used such devices to study the role of various structural characteristics in the device performance. n-channel MEISFETs were fabricated on two boron doped Si(100) substrates with resistivities of 5 ohm-cm and 10 ohm-cm. Epitaxial CaF//2 films 640-800 nm thick were grown in an MBE apparatus. The crystalline quality of the CaF//2 was determined by Rutherford backscattering and channeling.