Correlation between EF pinning and development of metallic character in Ag overlayers on GaAs(110)

K. Stiles; Antoine Kahn

doi:10.1103/PhysRevLett.60.440

Correlation between EF pinning and development of metallic character in Ag overlayers on GaAs(110)

K. Stiles, Antoine Kahn

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143 Scopus citations

Abstract

Ag is deposited on room-temperature and low-temperature GaAs(110). Correlation is found between the appearance of metallicity in the Ag layer, as inferred from the width of the Ag-4d band, and the pinning of the Fermi level at the GaAs surface. These results suggest the importance of metal-induced gap states at high coverage (>2 AI) in the formation of the Schottky barrier.

Original language	English (US)
Pages (from-to)	440-443
Number of pages	4
Journal	Physical review letters
Volume	60
Issue number	5
DOIs	https://doi.org/10.1103/PhysRevLett.60.440
State	Published - 1988

All Science Journal Classification (ASJC) codes

General Physics and Astronomy

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10.1103/PhysRevLett.60.440

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title = "Correlation between EF pinning and development of metallic character in Ag overlayers on GaAs(110)",

abstract = "Ag is deposited on room-temperature and low-temperature GaAs(110). Correlation is found between the appearance of metallicity in the Ag layer, as inferred from the width of the Ag-4d band, and the pinning of the Fermi level at the GaAs surface. These results suggest the importance of metal-induced gap states at high coverage (>2 AI) in the formation of the Schottky barrier.",

author = "K. Stiles and Antoine Kahn",

year = "1988",

doi = "10.1103/PhysRevLett.60.440",

language = "English (US)",

volume = "60",

pages = "440--443",

journal = "Physical review letters",

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publisher = "American Physical Society",

number = "5",

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AU - Stiles, K.

AU - Kahn, Antoine

PY - 1988

Y1 - 1988

N2 - Ag is deposited on room-temperature and low-temperature GaAs(110). Correlation is found between the appearance of metallicity in the Ag layer, as inferred from the width of the Ag-4d band, and the pinning of the Fermi level at the GaAs surface. These results suggest the importance of metal-induced gap states at high coverage (>2 AI) in the formation of the Schottky barrier.

AB - Ag is deposited on room-temperature and low-temperature GaAs(110). Correlation is found between the appearance of metallicity in the Ag layer, as inferred from the width of the Ag-4d band, and the pinning of the Fermi level at the GaAs surface. These results suggest the importance of metal-induced gap states at high coverage (>2 AI) in the formation of the Schottky barrier.

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DO - 10.1103/PhysRevLett.60.440

M3 - Article

C2 - 10038547

AN - SCOPUS:4143136984

SN - 0031-9007

VL - 60

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JO - Physical review letters

JF - Physical review letters

IS - 5

ER -

Correlation between EF pinning and development of metallic character in Ag overlayers on GaAs(110)

Abstract

All Science Journal Classification (ASJC) codes

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