Ag is deposited on room-temperature and low-temperature GaAs(110). Correlation is found between the appearance of metallicity in the Ag layer, as inferred from the width of the Ag-4d band, and the pinning of the Fermi level at the GaAs surface. These results suggest the importance of metal-induced gap states at high coverage (>2 AI) in the formation of the Schottky barrier.
|Original language||English (US)|
|Number of pages||4|
|Journal||Physical review letters|
|State||Published - Jan 1 1988|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)