Correlation between EF pinning and development of metallic character in Ag overlayers on GaAs(110)

K. Stiles, Antoine Kahn

Research output: Contribution to journalArticle

138 Scopus citations

Abstract

Ag is deposited on room-temperature and low-temperature GaAs(110). Correlation is found between the appearance of metallicity in the Ag layer, as inferred from the width of the Ag-4d band, and the pinning of the Fermi level at the GaAs surface. These results suggest the importance of metal-induced gap states at high coverage (>2 AI) in the formation of the Schottky barrier.

Original languageEnglish (US)
Pages (from-to)440-443
Number of pages4
JournalPhysical review letters
Volume60
Issue number5
DOIs
StatePublished - Jan 1 1988

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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