Correlating the nanostructure and electronic properties of InAs nanowires

M. D. Schroer, J. R. Petta

Research output: Contribution to journalArticle

114 Scopus citations

Abstract

The electronic properties and nanostructure of InAs nanowires are correlated by creating multiple field effect transistors (FETs) on nanowires grown to have low and high defect density segments. 4.2 K carrier mobilities are ∼4× larger in the nominally defect free segments of the wire. We also find that dark field optical intensity is correlated with the mobility, suggesting a simple route for selecting wires with a low defect density. At low temperatures, FETs fabricated on high defect density segments of InAs nanowires showed transport properties consistent with single electron charging, even on devices with low resistance ohmic contacts. The charging energies obtained suggest quantum dot formation at defects in the wires. These results reinforce the importance of controlling the defect density in order to produce high quality electrical and optical devices using InAs nanowires.

Original languageEnglish (US)
Pages (from-to)1618-1622
Number of pages5
JournalNano Letters
Volume10
Issue number5
DOIs
StatePublished - May 12 2010

All Science Journal Classification (ASJC) codes

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering

Keywords

  • Defects
  • Field effect mobility
  • InAs
  • Nanowire
  • Quantum dot

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