Correlated electron phenomena in ultra-low-disorder quantum point contacts and quantum wires

D. J. Reilly; G. R. Facer; A. S. Dzurak; B. E. Kane; R. G. Clark; N. E. Lumpkin; L. N. Pfeiffer; K. W. West

Correlated electron phenomena in ultra-low-disorder quantum point contacts and quantum wires

D. J. Reilly
, G. R. Facer
, A. S. Dzurak
, B. E. Kane
, R. G. Clark
, N. E. Lumpkin
, L. N. Pfeiffer
, K. W. West

Research output: Contribution to conference › Paper › peer-review

Abstract

The study of electron interaction effects in one dimensional transport requires heterostructures with ultra-low disorder. We have developed a novel GaAs/AlGaAs structure which avoids the random impurity potential present in conventional surface-gated HEMT devices by using epitaxially grown gates to produce an enhancement mode FET. Our quantum point contacts (QPCs) exhibit almost ideal conductance quantization, however, below 2e ²/h additional structure is observed. Such structure has also been seen in QPCs fabricated from ultra-high-mobility surface gated HEMTs and has been interpreted as evidence for a spin-correlated state. In our quantum wire devices this additional structure is further enhanced, indicating that the effective length of the 1D region may be a significant factor in determining the strength of correlation.

Original language	English (US)
Pages	486-488
Number of pages	3
State	Published - 1999
Externally published	Yes
Event	Proceedings of the 1998 Conference on Optoelectronic and Microelectronic Materials and Devices - Perth, WA, Aust Duration: Dec 14 1998 → Dec 16 1998

Conference

Conference	Proceedings of the 1998 Conference on Optoelectronic and Microelectronic Materials and Devices
City	Perth, WA, Aust
Period	12/14/98 → 12/16/98

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials

Cite this

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title = "Correlated electron phenomena in ultra-low-disorder quantum point contacts and quantum wires",

abstract = "The study of electron interaction effects in one dimensional transport requires heterostructures with ultra-low disorder. We have developed a novel GaAs/AlGaAs structure which avoids the random impurity potential present in conventional surface-gated HEMT devices by using epitaxially grown gates to produce an enhancement mode FET. Our quantum point contacts (QPCs) exhibit almost ideal conductance quantization, however, below 2e 2/h additional structure is observed. Such structure has also been seen in QPCs fabricated from ultra-high-mobility surface gated HEMTs and has been interpreted as evidence for a spin-correlated state. In our quantum wire devices this additional structure is further enhanced, indicating that the effective length of the 1D region may be a significant factor in determining the strength of correlation.",

author = "Reilly, \{D. J.\} and Facer, \{G. R.\} and Dzurak, \{A. S.\} and Kane, \{B. E.\} and Clark, \{R. G.\} and Lumpkin, \{N. E.\} and Pfeiffer, \{L. N.\} and West, \{K. W.\}",

year = "1999",

language = "English (US)",

pages = "486--488",

note = "Proceedings of the 1998 Conference on Optoelectronic and Microelectronic Materials and Devices ; Conference date: 14-12-1998 Through 16-12-1998",

}

TY - CONF

T1 - Correlated electron phenomena in ultra-low-disorder quantum point contacts and quantum wires

AU - Reilly, D. J.

AU - Facer, G. R.

AU - Dzurak, A. S.

AU - Kane, B. E.

AU - Clark, R. G.

AU - Lumpkin, N. E.

AU - Pfeiffer, L. N.

AU - West, K. W.

PY - 1999

Y1 - 1999

N2 - The study of electron interaction effects in one dimensional transport requires heterostructures with ultra-low disorder. We have developed a novel GaAs/AlGaAs structure which avoids the random impurity potential present in conventional surface-gated HEMT devices by using epitaxially grown gates to produce an enhancement mode FET. Our quantum point contacts (QPCs) exhibit almost ideal conductance quantization, however, below 2e 2/h additional structure is observed. Such structure has also been seen in QPCs fabricated from ultra-high-mobility surface gated HEMTs and has been interpreted as evidence for a spin-correlated state. In our quantum wire devices this additional structure is further enhanced, indicating that the effective length of the 1D region may be a significant factor in determining the strength of correlation.

AB - The study of electron interaction effects in one dimensional transport requires heterostructures with ultra-low disorder. We have developed a novel GaAs/AlGaAs structure which avoids the random impurity potential present in conventional surface-gated HEMT devices by using epitaxially grown gates to produce an enhancement mode FET. Our quantum point contacts (QPCs) exhibit almost ideal conductance quantization, however, below 2e 2/h additional structure is observed. Such structure has also been seen in QPCs fabricated from ultra-high-mobility surface gated HEMTs and has been interpreted as evidence for a spin-correlated state. In our quantum wire devices this additional structure is further enhanced, indicating that the effective length of the 1D region may be a significant factor in determining the strength of correlation.

UR - https://www.scopus.com/pages/publications/0032683342

UR - https://www.scopus.com/pages/publications/0032683342#tab=citedBy

M3 - Paper

AN - SCOPUS:0032683342

SP - 486

EP - 488

T2 - Proceedings of the 1998 Conference on Optoelectronic and Microelectronic Materials and Devices

Y2 - 14 December 1998 through 16 December 1998

ER -

Correlated electron phenomena in ultra-low-disorder quantum point contacts and quantum wires

Abstract

Conference

All Science Journal Classification (ASJC) codes

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