Correlated electron phenomena in ultra-low-disorder quantum point contacts and quantum wires

D. J. Reilly, G. R. Facer, A. S. Dzurak, B. E. Kane, R. G. Clark, N. E. Lumpkin, L. N. Pfeiffer, K. W. West

Research output: Contribution to conferencePaperpeer-review

Abstract

The study of electron interaction effects in one dimensional transport requires heterostructures with ultra-low disorder. We have developed a novel GaAs/AlGaAs structure which avoids the random impurity potential present in conventional surface-gated HEMT devices by using epitaxially grown gates to produce an enhancement mode FET. Our quantum point contacts (QPCs) exhibit almost ideal conductance quantization, however, below 2e 2/h additional structure is observed. Such structure has also been seen in QPCs fabricated from ultra-high-mobility surface gated HEMTs and has been interpreted as evidence for a spin-correlated state. In our quantum wire devices this additional structure is further enhanced, indicating that the effective length of the 1D region may be a significant factor in determining the strength of correlation.

Original languageEnglish (US)
Pages486-488
Number of pages3
StatePublished - 1999
Externally publishedYes
EventProceedings of the 1998 Conference on Optoelectronic and Microelectronic Materials and Devices - Perth, WA, Aust
Duration: Dec 14 1998Dec 16 1998

Conference

ConferenceProceedings of the 1998 Conference on Optoelectronic and Microelectronic Materials and Devices
CityPerth, WA, Aust
Period12/14/9812/16/98

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials

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