Abstract
The study of electron interaction effects in one dimensional transport requires heterostructures with ultra-low disorder. We have developed a novel GaAs/AlGaAs structure which avoids the random impurity potential present in conventional surface-gated HEMT devices by using epitaxially grown gates to produce an enhancement mode FET. Our quantum point contacts (QPCs) exhibit almost ideal conductance quantization, however, below 2e 2/h additional structure is observed. Such structure has also been seen in QPCs fabricated from ultra-high-mobility surface gated HEMTs and has been interpreted as evidence for a spin-correlated state. In our quantum wire devices this additional structure is further enhanced, indicating that the effective length of the 1D region may be a significant factor in determining the strength of correlation.
Original language | English (US) |
---|---|
Pages | 486-488 |
Number of pages | 3 |
State | Published - 1999 |
Externally published | Yes |
Event | Proceedings of the 1998 Conference on Optoelectronic and Microelectronic Materials and Devices - Perth, WA, Aust Duration: Dec 14 1998 → Dec 16 1998 |
Conference
Conference | Proceedings of the 1998 Conference on Optoelectronic and Microelectronic Materials and Devices |
---|---|
City | Perth, WA, Aust |
Period | 12/14/98 → 12/16/98 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials