Controlling surfaces in plasma processing: Role of ions via molecular dynamics simulations of surface chemistry

David Humbird, David B. Graves

Research output: Contribution to journalConference articlepeer-review

13 Scopus citations

Abstract

A study of the interactions of energetic ions with various surfaces using molecular dynamics simulations is reported. Silicon atoms in the amorphous region are readily mixed by argon ions. Limited mixing in the crystalline layer is observed. Fluorine adsorbed on the silicon surface does not mix into the layer with argon ion impact. When an energetic F+ impacts a silicon surface, the uptake and apparent sub-surface mixing of F is much greater than Ar+-induced mixing. However, a closer examination shows that the F impacts have primarily increased the Si surface area by creating crevices and cracks, and that the F remains mainly on the surface of this layer.

Original languageEnglish (US)
Pages (from-to)A191-A195
JournalPlasma Sources Science and Technology
Volume11
Issue number3 A
DOIs
StatePublished - Aug 2002
Externally publishedYes
Event25th International Conference on Phenomena in Ionizied Gases - Nagoya, Japan
Duration: Jul 17 2001Jul 22 2001

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics

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