Controlling nucleation and crystallization in solution-processed organic semiconductors for thin-film transistors

Stephanie S. Lee, Chang Su Kim, Enrique D. Gomez, Balaji Purushothaman, Michael F. Toney, Cheng Wang, Alexander Hexemer, John E. Anthony, Yueh Lin Loo

Research output: Contribution to journalArticle

115 Scopus citations

Abstract

A simple and straightforward processing methodology for tuning the grain size over three orders of magnitude in the active layer of OTFTs in length has been demonstrated. The characteristics of solution-processed OTFTs can also vary dramatically depending on the morphology of the active layer. The goal of controlling the crystallization of TES-ADT, fluorinated 5, 11- bis(triethylsilylethynyl) anthradithiophene (FTES-ADT) to seed the nucleation of the active layer. OTFT were fabricated in a bottom-contact geometry, using phosphor- doped silicon as the gate electrode and a 300 nm thermally grown Si02 layer as the gate dielectric. This process involves the addition of fractional quantities 'impurities' that is capable of seeding the crystallization the organic semiconductor. This method of seeding the crystallization of solution processed organic semiconductors effectively eliminates grain size variation in the active layers of OTFT, thus providing a robust route to fabricating reliable and reproducible devices.

Original languageEnglish (US)
Pages (from-to)3605-3609
Number of pages5
JournalAdvanced Materials
Volume21
Issue number35
DOIs
StatePublished - Oct 14 2009

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

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    Lee, S. S., Kim, C. S., Gomez, E. D., Purushothaman, B., Toney, M. F., Wang, C., Hexemer, A., Anthony, J. E., & Loo, Y. L. (2009). Controlling nucleation and crystallization in solution-processed organic semiconductors for thin-film transistors. Advanced Materials, 21(35), 3605-3609. https://doi.org/10.1002/adma.200900705