Control of oxygen incorporation and lifetime measurement in Si1-xGex epitaxial films grown by rapid thermal chemical vapor deposition

J. C. Sturm; P. V. Schwartz; E. J. Prinz; C. Magee

Control of oxygen incorporation and lifetime measurement in Si_1-xGe_x epitaxial films grown by rapid thermal chemical vapor deposition

J. C. Sturm
, P. V. Schwartz
, E. J. Prinz
, C. Magee

Research output: Contribution to journal › Conference article › peer-review

Abstract

Oxygen levels in epitaxial Si_1-xGe_x films grown by rapid thermal chemical vapor deposition (RTCVD) have been reduced to under 2 × 10¹⁸ cm^-3, and the source of oxygen in films with higher oxygen concentration has been identified. Films with low oxygen levels have minority carrier lifetimes in the μs range, and Si/Si_1-xGe_x/Si heterojunction bipolar transistors (HBT's) fabricated with low oxygen levels have near-ideal base currents which do not depend on the base composition.

Original language	English (US)
Pages (from-to)	252-259
Number of pages	8
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	1393
State	Published - 1991
Event	Rapid Thermal and Related Processing Techniques - Santa Clara, CA, USA Duration: Oct 2 1990 → Oct 3 1990

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

Cite this

@article{b3337908746e474f8995f1875e5f2e0f,

title = "Control of oxygen incorporation and lifetime measurement in Si1-xGex epitaxial films grown by rapid thermal chemical vapor deposition",

abstract = "Oxygen levels in epitaxial Si1-xGex films grown by rapid thermal chemical vapor deposition (RTCVD) have been reduced to under 2 × 1018 cm-3, and the source of oxygen in films with higher oxygen concentration has been identified. Films with low oxygen levels have minority carrier lifetimes in the μs range, and Si/Si1-xGex/Si heterojunction bipolar transistors (HBT's) fabricated with low oxygen levels have near-ideal base currents which do not depend on the base composition.",

author = "Sturm, \{J. C.\} and Schwartz, \{P. V.\} and Prinz, \{E. J.\} and C. Magee",

year = "1991",

language = "English (US)",

volume = "1393",

pages = "252--259",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

issn = "0277-786X",

publisher = "SPIE",

note = "Rapid Thermal and Related Processing Techniques ; Conference date: 02-10-1990 Through 03-10-1990",

}

Control of oxygen incorporation and lifetime measurement in Si_1-xGe_x epitaxial films grown by rapid thermal chemical vapor deposition. / Sturm, J. C.; Schwartz, P. V.; Prinz, E. J. et al.
In: Proceedings of SPIE - The International Society for Optical Engineering, Vol. 1393, 1991, p. 252-259.

Research output: Contribution to journal › Conference article › peer-review

TY - JOUR

T1 - Control of oxygen incorporation and lifetime measurement in Si1-xGex epitaxial films grown by rapid thermal chemical vapor deposition

AU - Sturm, J. C.

AU - Schwartz, P. V.

AU - Prinz, E. J.

AU - Magee, C.

PY - 1991

Y1 - 1991

N2 - Oxygen levels in epitaxial Si1-xGex films grown by rapid thermal chemical vapor deposition (RTCVD) have been reduced to under 2 × 1018 cm-3, and the source of oxygen in films with higher oxygen concentration has been identified. Films with low oxygen levels have minority carrier lifetimes in the μs range, and Si/Si1-xGex/Si heterojunction bipolar transistors (HBT's) fabricated with low oxygen levels have near-ideal base currents which do not depend on the base composition.

AB - Oxygen levels in epitaxial Si1-xGex films grown by rapid thermal chemical vapor deposition (RTCVD) have been reduced to under 2 × 1018 cm-3, and the source of oxygen in films with higher oxygen concentration has been identified. Films with low oxygen levels have minority carrier lifetimes in the μs range, and Si/Si1-xGex/Si heterojunction bipolar transistors (HBT's) fabricated with low oxygen levels have near-ideal base currents which do not depend on the base composition.

UR - https://www.scopus.com/pages/publications/0025721528

UR - https://www.scopus.com/pages/publications/0025721528#tab=citedBy

M3 - Conference article

AN - SCOPUS:0025721528

SN - 0277-786X

VL - 1393

SP - 252

EP - 259

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

T2 - Rapid Thermal and Related Processing Techniques

Y2 - 2 October 1990 through 3 October 1990

ER -

Control of oxygen incorporation and lifetime measurement in Si_1-xGe_x epitaxial films grown by rapid thermal chemical vapor deposition

Abstract

All Science Journal Classification (ASJC) codes

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