Control of oxygen incorporation and lifetime measurement in Si1-xGex epitaxial films grown by rapid thermal chemical vapor deposition

James Christopher Sturm, P. V. Schwartz, E. J. Prinz, C. Magee

Research output: Contribution to journalConference article

4 Scopus citations

Abstract

Oxygen levels in epitaxial Si1-xGex films grown by rapid thermal chemical vapor deposition (RTCVD) have been reduced to under 2 × 1018 cm-3, and the source of oxygen in films with higher oxygen concentration has been identified. Films with low oxygen levels have minority carrier lifetimes in the μs range, and Si/Si1-xGex/Si heterojunction bipolar transistors (HBT's) fabricated with low oxygen levels have near-ideal base currents which do not depend on the base composition.

Original languageEnglish (US)
Pages (from-to)252-259
Number of pages8
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume1393
StatePublished - Jan 1 1991
EventRapid Thermal and Related Processing Techniques - Santa Clara, CA, USA
Duration: Oct 2 1990Oct 3 1990

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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