Control of MBE surface step-edge kinetics to make an atomically smooth quantum well

M. Yoshita; Ji Won Oh; H. Akiyamat; L. Pfeiffer; K. W. Westt

doi:10.1109/MBE.2002.1037780

Control of MBE surface step-edge kinetics to make an atomically smooth quantum well

M. Yoshita, Ji Won Oh, H. Akiyamat, L. Pfeiffer, K. W. Westt

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Summary form only given. On an atomic scale, all quantum wells grown by conventional MBE have rough barrier-well interfaces with step-edges, pits, or islands one or more monolayers (MLs) high. Cleaved-edge overgrowth is MBE on the atomically flat [110] surface exposed by an in situ cleave so that there exists no roughness on this bottom interface. The top surface of the overgrown [110] film, however, generally has large roughness due to the required GaAs [110] growth conditions. Here we control the molecular step-edge kinetics on the upper interface by growing on the smooth [110] cleave an integral number of GaAs MLs and then initiating a growth-interrupt-anneal. We characterize the structures using AFM and photoluminescence.

Original language	English (US)
Title of host publication	MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	103-104
Number of pages	2
ISBN (Electronic)	0780375815, 9780780375819
DOIs	https://doi.org/10.1109/MBE.2002.1037780
State	Published - 2002
Externally published	Yes
Event	12th International Conference on Molecular Beam Epitaxy, MBE 2002 - San Francisco, United States Duration: Sep 15 2002 → Sep 20 2002

Publication series

Name	MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy

Conference

Conference	12th International Conference on Molecular Beam Epitaxy, MBE 2002
Country/Territory	United States
City	San Francisco
Period	9/15/02 → 9/20/02

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials
Materials Chemistry

Access to Document

10.1109/MBE.2002.1037780

Cite this

Yoshita, M., Oh, J. W., Akiyamat, H., Pfeiffer, L., & Westt, K. W. (2002). Control of MBE surface step-edge kinetics to make an atomically smooth quantum well. In MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy (pp. 103-104). Article 1037780 (MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/MBE.2002.1037780

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abstract = "Summary form only given. On an atomic scale, all quantum wells grown by conventional MBE have rough barrier-well interfaces with step-edges, pits, or islands one or more monolayers (MLs) high. Cleaved-edge overgrowth is MBE on the atomically flat [110] surface exposed by an in situ cleave so that there exists no roughness on this bottom interface. The top surface of the overgrown [110] film, however, generally has large roughness due to the required GaAs [110] growth conditions. Here we control the molecular step-edge kinetics on the upper interface by growing on the smooth [110] cleave an integral number of GaAs MLs and then initiating a growth-interrupt-anneal. We characterize the structures using AFM and photoluminescence.",

author = "M. Yoshita and Oh, {Ji Won} and H. Akiyamat and L. Pfeiffer and Westt, {K. W.}",

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doi = "10.1109/MBE.2002.1037780",

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series = "MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy",

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Yoshita, M, Oh, JW, Akiyamat, H, Pfeiffer, L & Westt, KW 2002, Control of MBE surface step-edge kinetics to make an atomically smooth quantum well. in MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy., 1037780, MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy, Institute of Electrical and Electronics Engineers Inc., pp. 103-104, 12th International Conference on Molecular Beam Epitaxy, MBE 2002, San Francisco, United States, 9/15/02. https://doi.org/10.1109/MBE.2002.1037780

Control of MBE surface step-edge kinetics to make an atomically smooth quantum well. / Yoshita, M.; Oh, Ji Won; Akiyamat, H. et al.
MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy. Institute of Electrical and Electronics Engineers Inc., 2002. p. 103-104 1037780 (MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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N2 - Summary form only given. On an atomic scale, all quantum wells grown by conventional MBE have rough barrier-well interfaces with step-edges, pits, or islands one or more monolayers (MLs) high. Cleaved-edge overgrowth is MBE on the atomically flat [110] surface exposed by an in situ cleave so that there exists no roughness on this bottom interface. The top surface of the overgrown [110] film, however, generally has large roughness due to the required GaAs [110] growth conditions. Here we control the molecular step-edge kinetics on the upper interface by growing on the smooth [110] cleave an integral number of GaAs MLs and then initiating a growth-interrupt-anneal. We characterize the structures using AFM and photoluminescence.

AB - Summary form only given. On an atomic scale, all quantum wells grown by conventional MBE have rough barrier-well interfaces with step-edges, pits, or islands one or more monolayers (MLs) high. Cleaved-edge overgrowth is MBE on the atomically flat [110] surface exposed by an in situ cleave so that there exists no roughness on this bottom interface. The top surface of the overgrown [110] film, however, generally has large roughness due to the required GaAs [110] growth conditions. Here we control the molecular step-edge kinetics on the upper interface by growing on the smooth [110] cleave an integral number of GaAs MLs and then initiating a growth-interrupt-anneal. We characterize the structures using AFM and photoluminescence.

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Yoshita M, Oh JW, Akiyamat H, Pfeiffer L, Westt KW. Control of MBE surface step-edge kinetics to make an atomically smooth quantum well. In MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy. Institute of Electrical and Electronics Engineers Inc. 2002. p. 103-104. 1037780. (MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy). doi: 10.1109/MBE.2002.1037780

Control of MBE surface step-edge kinetics to make an atomically smooth quantum well

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