Control of MBE surface step-edge kinetics to make an atomically smooth quantum well

M. Yoshita, Ji Won Oh, H. Akiyamat, L. Pfeiffer, K. W. Westt

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Summary form only given. On an atomic scale, all quantum wells grown by conventional MBE have rough barrier-well interfaces with step-edges, pits, or islands one or more monolayers (MLs) high. Cleaved-edge overgrowth is MBE on the atomically flat [110] surface exposed by an in situ cleave so that there exists no roughness on this bottom interface. The top surface of the overgrown [110] film, however, generally has large roughness due to the required GaAs [110] growth conditions. Here we control the molecular step-edge kinetics on the upper interface by growing on the smooth [110] cleave an integral number of GaAs MLs and then initiating a growth-interrupt-anneal. We characterize the structures using AFM and photoluminescence.

Original languageEnglish (US)
Title of host publicationMBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages103-104
Number of pages2
ISBN (Electronic)0780375815, 9780780375819
DOIs
StatePublished - 2002
Externally publishedYes
Event12th International Conference on Molecular Beam Epitaxy, MBE 2002 - San Francisco, United States
Duration: Sep 15 2002Sep 20 2002

Publication series

NameMBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy

Conference

Conference12th International Conference on Molecular Beam Epitaxy, MBE 2002
Country/TerritoryUnited States
CitySan Francisco
Period9/15/029/20/02

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry

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