Abstract
By cleaved-edge overgrowth with molecular beam epitaxy and high-temperature growth-interrupt anneal, molecular step-edge kinetics on the epitaxial surface grown on the cleave has been successfully controlled. A (110) GaAs QW exactly integral 30-monolayers thick with atomically smooth heterointerfaces has been demonstrated, which shows spatially uniform and spectrally sharp photoluminescence. Precise measures of stable characteristic-shaped islands or pits on the surfaces fractional monolayers thick and successful modeling of these shapes suggest that the driving force towards the atomically smooth (110) surface relies on the stability of Ga and As atoms on the step edges.
Original language | English (US) |
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Pages (from-to) | 62-67 |
Number of pages | 6 |
Journal | Journal of Crystal Growth |
Volume | 251 |
Issue number | 1-4 |
DOIs | |
State | Published - Apr 2003 |
Externally published | Yes |
Event | Proceedings of the Molecular Beam Epitaxy 2002 - San Francisco, CA, United States Duration: Sep 15 2002 → Sep 20 2002 |
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Inorganic Chemistry
- Materials Chemistry
Keywords
- A1. Surface morphology
- A3. Molecular beam epitaxy
- A3. Quantum wells
- Al. Atomic force microscopy
- B2. Gallium arsenide