Control of MBE surface step-edge kinetics to make an atomically smooth quantum well

Masahiro Yoshita, Ji Won Oh, Hidefumi Akiyama, Loren N. Pfeiffer, Ken W. West

Research output: Contribution to journalConference articlepeer-review

7 Scopus citations


By cleaved-edge overgrowth with molecular beam epitaxy and high-temperature growth-interrupt anneal, molecular step-edge kinetics on the epitaxial surface grown on the cleave has been successfully controlled. A (110) GaAs QW exactly integral 30-monolayers thick with atomically smooth heterointerfaces has been demonstrated, which shows spatially uniform and spectrally sharp photoluminescence. Precise measures of stable characteristic-shaped islands or pits on the surfaces fractional monolayers thick and successful modeling of these shapes suggest that the driving force towards the atomically smooth (110) surface relies on the stability of Ga and As atoms on the step edges.

Original languageEnglish (US)
Pages (from-to)62-67
Number of pages6
JournalJournal of Crystal Growth
Issue number1-4
StatePublished - Apr 2003
Externally publishedYes
EventProceedings of the Molecular Beam Epitaxy 2002 - San Francisco, CA, United States
Duration: Sep 15 2002Sep 20 2002

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry


  • A1. Surface morphology
  • A3. Molecular beam epitaxy
  • A3. Quantum wells
  • Al. Atomic force microscopy
  • B2. Gallium arsenide


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