Contactless gating, surface charging and illumination effects in a buried Al0.24Ga0.76As/GaAs quantum well structure

M. Biasini; R. D. Gann; L. N. Pfeiffer; K. W. West; X. P.A. Gao; B. C.D. Williams; J. A. Yarmoff; A. P. Mills

doi:10.1140/epjb/e2005-00326-9

Contactless gating, surface charging and illumination effects in a buried Al_0.24Ga_0.76As/GaAs quantum well structure

M. Biasini, R. D. Gann, L. N. Pfeiffer, K. W. West, X. P.A. Gao, B. C.D. Williams, J. A. Yarmoff, A. P. Mills

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2 Scopus citations

Abstract

The conductivity of an Al_0.24Ga_0.76As/GaAs quantum well was studied as a function of the surface charge generated by electron bombardment of the sample in the absence of an externally applied surface electric field. Under a suitable rate of electron irradiation, it was possible to completely shut off the conductive channel, implying a surface density n = 2.5 × 10¹¹ el/cm². Light illumination quenches the increase of the resistivity, apparently due to photoemission from the metastable surface states. Upon turning off the electron bombardment the surface charge on adsorbed layers of xenon and water at 8 K decays in room temperature darkness with a lifetime τ= 0.30 ±0.02 s. The average charging efficiency, is μ₀ ≃0.001. Surface charging is shown to be an effective method for contactless gating of field effect devices.

Original language	English (US)
Pages (from-to)	305-314
Number of pages	10
Journal	European Physical Journal B
Volume	47
Issue number	2
DOIs	https://doi.org/10.1140/epjb/e2005-00326-9
State	Published - Sep 2005
Externally published	Yes

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1140/epjb/e2005-00326-9

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title = "Contactless gating, surface charging and illumination effects in a buried Al0.24Ga0.76As/GaAs quantum well structure",

abstract = "The conductivity of an Al0.24Ga0.76As/GaAs quantum well was studied as a function of the surface charge generated by electron bombardment of the sample in the absence of an externally applied surface electric field. Under a suitable rate of electron irradiation, it was possible to completely shut off the conductive channel, implying a surface density n = 2.5 × 1011 el/cm2. Light illumination quenches the increase of the resistivity, apparently due to photoemission from the metastable surface states. Upon turning off the electron bombardment the surface charge on adsorbed layers of xenon and water at 8 K decays in room temperature darkness with a lifetime τ= 0.30 ±0.02 s. The average charging efficiency, is μ0 ≃0.001. Surface charging is shown to be an effective method for contactless gating of field effect devices.",

author = "M. Biasini and Gann, {R. D.} and Pfeiffer, {L. N.} and West, {K. W.} and Gao, {X. P.A.} and Williams, {B. C.D.} and Yarmoff, {J. A.} and Mills, {A. P.}",

year = "2005",

month = sep,

doi = "10.1140/epjb/e2005-00326-9",

language = "English (US)",

volume = "47",

pages = "305--314",

journal = "European Physical Journal B",

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publisher = "Springer New York",

number = "2",

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TY - JOUR

T1 - Contactless gating, surface charging and illumination effects in a buried Al0.24Ga0.76As/GaAs quantum well structure

AU - Biasini, M.

AU - Gann, R. D.

AU - Pfeiffer, L. N.

AU - West, K. W.

AU - Gao, X. P.A.

AU - Williams, B. C.D.

AU - Yarmoff, J. A.

AU - Mills, A. P.

PY - 2005/9

Y1 - 2005/9

N2 - The conductivity of an Al0.24Ga0.76As/GaAs quantum well was studied as a function of the surface charge generated by electron bombardment of the sample in the absence of an externally applied surface electric field. Under a suitable rate of electron irradiation, it was possible to completely shut off the conductive channel, implying a surface density n = 2.5 × 1011 el/cm2. Light illumination quenches the increase of the resistivity, apparently due to photoemission from the metastable surface states. Upon turning off the electron bombardment the surface charge on adsorbed layers of xenon and water at 8 K decays in room temperature darkness with a lifetime τ= 0.30 ±0.02 s. The average charging efficiency, is μ0 ≃0.001. Surface charging is shown to be an effective method for contactless gating of field effect devices.

AB - The conductivity of an Al0.24Ga0.76As/GaAs quantum well was studied as a function of the surface charge generated by electron bombardment of the sample in the absence of an externally applied surface electric field. Under a suitable rate of electron irradiation, it was possible to completely shut off the conductive channel, implying a surface density n = 2.5 × 1011 el/cm2. Light illumination quenches the increase of the resistivity, apparently due to photoemission from the metastable surface states. Upon turning off the electron bombardment the surface charge on adsorbed layers of xenon and water at 8 K decays in room temperature darkness with a lifetime τ= 0.30 ±0.02 s. The average charging efficiency, is μ0 ≃0.001. Surface charging is shown to be an effective method for contactless gating of field effect devices.

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U2 - 10.1140/epjb/e2005-00326-9

DO - 10.1140/epjb/e2005-00326-9

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SN - 1434-6028

VL - 47

SP - 305

EP - 314

JO - European Physical Journal B

JF - European Physical Journal B

IS - 2

ER -

Contactless gating, surface charging and illumination effects in a buried Al_0.24Ga_0.76As/GaAs quantum well structure

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