Conductivity kinks in the transport of ultradilute two-dimensional GaAs hole systems in zero field

Jian Huang; L. N. Pfeiffer; K. W. West

doi:10.1103/PhysRevB.83.081310

Conductivity kinks in the transport of ultradilute two-dimensional GaAs hole systems in zero field

Jian Huang
, L. N. Pfeiffer
, K. W. West

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

High-purity two-dimensional hole systems of dilute charge concentrations are realized in GaAs field-effect transistors. For fixed charge densities below 4×109 cm^-2, transport measurement reveals a conductivity (σ) kink while sweeping temperature across some characteristic value T_c, where the derivative dσ/dT exhibits a discontinuous step. Moreover, T_c has a piecewise density dependence separated approximately by the critical density of the apparent metal-to-insulator transition.

Original language	English (US)
Article number	081310
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	83
Issue number	8
DOIs	https://doi.org/10.1103/PhysRevB.83.081310
State	Published - Feb 22 2011
Externally published	Yes

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1103/PhysRevB.83.081310

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abstract = "High-purity two-dimensional hole systems of dilute charge concentrations are realized in GaAs field-effect transistors. For fixed charge densities below 4×109 cm-2, transport measurement reveals a conductivity (σ) kink while sweeping temperature across some characteristic value Tc, where the derivative dσ/dT exhibits a discontinuous step. Moreover, Tc has a piecewise density dependence separated approximately by the critical density of the apparent metal-to-insulator transition.",

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Conductivity kinks in the transport of ultradilute two-dimensional GaAs hole systems in zero field

Abstract

All Science Journal Classification (ASJC) codes

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