Abstract
High-purity two-dimensional hole systems of dilute charge concentrations are realized in GaAs field-effect transistors. For fixed charge densities below 4×109 cm-2, transport measurement reveals a conductivity (σ) kink while sweeping temperature across some characteristic value Tc, where the derivative dσ/dT exhibits a discontinuous step. Moreover, Tc has a piecewise density dependence separated approximately by the critical density of the apparent metal-to-insulator transition.
Original language | English (US) |
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Article number | 081310 |
Journal | Physical Review B - Condensed Matter and Materials Physics |
Volume | 83 |
Issue number | 8 |
DOIs | |
State | Published - Feb 22 2011 |
Externally published | Yes |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics