Conduction-band offset determination in GaAs-AlxGa1-xAs through measurement of infrared internal photoemission

K. W. Goossen, Stephen Aplin Lyon, K. Alavi

Research output: Contribution to journalArticle

8 Scopus citations

Abstract

Internal photoemission from a two-dimensional electron gas formed at GaAs-AlxGa1-xAs selectively doped heterojunctions has been measured for x=0.25, 0.28, 0.36, and 0.38. The photoresponse increases rapidly with the angle of incidence of the light, indicating that it results from intersubbandlike transitions. We have developed a model for the photoemission, and used the measurement to determine the conduction-band offset. We find values of Qe=Ec EG of 0.79, 0.76, 0.67, and 0.65, respectively, for the x numbers stated above, showing a smooth decrease with x.

Original languageEnglish (US)
Pages (from-to)9370-9373
Number of pages4
JournalPhysical Review B
Volume36
Issue number17
DOIs
StatePublished - Jan 1 1987

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics

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