TY - JOUR
T1 - Conduction-band offset determination in GaAs-AlxGa1-xAs through measurement of infrared internal photoemission
AU - Goossen, K. W.
AU - Lyon, S. A.
AU - Alavi, K.
PY - 1987
Y1 - 1987
N2 - Internal photoemission from a two-dimensional electron gas formed at GaAs-AlxGa1-xAs selectively doped heterojunctions has been measured for x=0.25, 0.28, 0.36, and 0.38. The photoresponse increases rapidly with the angle of incidence of the light, indicating that it results from intersubbandlike transitions. We have developed a model for the photoemission, and used the measurement to determine the conduction-band offset. We find values of Qe=Ec EG of 0.79, 0.76, 0.67, and 0.65, respectively, for the x numbers stated above, showing a smooth decrease with x.
AB - Internal photoemission from a two-dimensional electron gas formed at GaAs-AlxGa1-xAs selectively doped heterojunctions has been measured for x=0.25, 0.28, 0.36, and 0.38. The photoresponse increases rapidly with the angle of incidence of the light, indicating that it results from intersubbandlike transitions. We have developed a model for the photoemission, and used the measurement to determine the conduction-band offset. We find values of Qe=Ec EG of 0.79, 0.76, 0.67, and 0.65, respectively, for the x numbers stated above, showing a smooth decrease with x.
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U2 - 10.1103/PhysRevB.36.9370
DO - 10.1103/PhysRevB.36.9370
M3 - Article
AN - SCOPUS:35949009846
SN - 0163-1829
VL - 36
SP - 9370
EP - 9373
JO - Physical Review B
JF - Physical Review B
IS - 17
ER -