Abstract
We show that the conduction-band minimum in a (GaAs)1/(AlAs)1 superlattice derives from the Xx,y minimum of bulk AlAs, not from L of GaAs as predicted by many theoretical calculations. This is shown by the sign of the shift in the low-temperature photoluminescence under [001] stress, by the relative magnitudes of the shifts under [100] and [110] stress, by the phonon sidebands, and by the observation of a splitting under [100] but not under [110] stress.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 3432-3435 |
| Number of pages | 4 |
| Journal | Physical Review B |
| Volume | 44 |
| Issue number | 7 |
| DOIs | |
| State | Published - 1991 |
| Externally published | Yes |
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics