Conductance fluctuations in ultra-short-channel Si MOSFETS

S. Y. Chou; D. A. Antoniadis; H. I. Smith; M. A. Kastner

doi:10.1016/0038-1098(87)90172-4

Conductance fluctuations in ultra-short-channel Si MOSFETS

S. Y. Chou, D. A. Antoniadis, H. I. Smith, M. A. Kastner

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

Conductance fluctuations with gate voltage near threshold are observed at temperature up to 10K in metal-oxide-semiconductor field-effect transistors (MOSFETs) with wide (44 μm) but short (≤0.15 μm) channels. The reproducible variations are consistent with the universal conductance fluctuations predicted by Lee and Stone.

Original language	English (US)
Pages (from-to)	571-572
Number of pages	2
Journal	Solid State Communications
Volume	61
Issue number	9
DOIs	https://doi.org/10.1016/0038-1098(87)90172-4
State	Published - Mar 1987
Externally published	Yes

All Science Journal Classification (ASJC) codes

General Chemistry
Condensed Matter Physics
Materials Chemistry

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10.1016/0038-1098(87)90172-4

Cite this

@article{c8b6ea6f2a614b6ab231bca093a2c87a,

title = "Conductance fluctuations in ultra-short-channel Si MOSFETS",

abstract = "Conductance fluctuations with gate voltage near threshold are observed at temperature up to 10K in metal-oxide-semiconductor field-effect transistors (MOSFETs) with wide (44 μm) but short (≤0.15 μm) channels. The reproducible variations are consistent with the universal conductance fluctuations predicted by Lee and Stone.",

author = "Chou, {S. Y.} and Antoniadis, {D. A.} and Smith, {H. I.} and Kastner, {M. A.}",

year = "1987",

month = mar,

doi = "10.1016/0038-1098(87)90172-4",

language = "English (US)",

volume = "61",

pages = "571--572",

journal = "Solid State Communications",

issn = "0038-1098",

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number = "9",

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T1 - Conductance fluctuations in ultra-short-channel Si MOSFETS

AU - Chou, S. Y.

AU - Antoniadis, D. A.

AU - Smith, H. I.

AU - Kastner, M. A.

PY - 1987/3

Y1 - 1987/3

N2 - Conductance fluctuations with gate voltage near threshold are observed at temperature up to 10K in metal-oxide-semiconductor field-effect transistors (MOSFETs) with wide (44 μm) but short (≤0.15 μm) channels. The reproducible variations are consistent with the universal conductance fluctuations predicted by Lee and Stone.

AB - Conductance fluctuations with gate voltage near threshold are observed at temperature up to 10K in metal-oxide-semiconductor field-effect transistors (MOSFETs) with wide (44 μm) but short (≤0.15 μm) channels. The reproducible variations are consistent with the universal conductance fluctuations predicted by Lee and Stone.

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U2 - 10.1016/0038-1098(87)90172-4

DO - 10.1016/0038-1098(87)90172-4

M3 - Article

AN - SCOPUS:0023307451

SN - 0038-1098

VL - 61

SP - 571

EP - 572

JO - Solid State Communications

JF - Solid State Communications

IS - 9

ER -

Conductance fluctuations in ultra-short-channel Si MOSFETS

Abstract

All Science Journal Classification (ASJC) codes

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