Conductance fluctuations with gate voltage near threshold are observed at temperature up to 10K in metal-oxide-semiconductor field-effect transistors (MOSFETs) with wide (44 μm) but short (≤0.15 μm) channels. The reproducible variations are consistent with the universal conductance fluctuations predicted by Lee and Stone.
|Original language||English (US)|
|Number of pages||2|
|Journal||Solid State Communications|
|State||Published - Mar 1987|
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Materials Chemistry