Conductance fluctuations in ultra-short-channel Si MOSFETS

S. Y. Chou, D. A. Antoniadis, H. I. Smith, M. A. Kastner

Research output: Contribution to journalArticlepeer-review

5 Scopus citations


Conductance fluctuations with gate voltage near threshold are observed at temperature up to 10K in metal-oxide-semiconductor field-effect transistors (MOSFETs) with wide (44 μm) but short (≤0.15 μm) channels. The reproducible variations are consistent with the universal conductance fluctuations predicted by Lee and Stone.

Original languageEnglish (US)
Pages (from-to)571-572
Number of pages2
JournalSolid State Communications
Issue number9
StatePublished - Mar 1987
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • General Chemistry
  • Condensed Matter Physics
  • Materials Chemistry


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