Comprehensive study of lateral and vertical current transport in Si/ Si1-xGex/Si HBT's

Z. Matutinovic-Krstelj; V. Venkataraman; E. J. Prinz; J. C. Sturm; C. W. Magee

Comprehensive study of lateral and vertical current transport in Si/ Si_1-xGe_x/Si HBT's

Z. Matutinovic-Krstelj, V. Venkataraman, E. J. Prinz, J. C. Sturm, C. W. Magee

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We studied the effects of heavy doping and Ge concentration in the base on the dc performance of Si/Si_1-xGe_x/Si npn HBT's. The lateral drift mobility of holes in heavily doped epitaxial SiGe bases is found to be lower than bulk Si values and independent of Ge content, and the Hall scattering factor is less than unity and decreases with increasing Ge concentration. For the vertical electron transport we have observed bandgap narrowing due to heavy base doping which is, to first order, independent of Ge concentration. Finally, a model for the collector current enhancement with respect of Si devices, including the effects of reduced density of states in the strained Si_1-xGe_x base and the effective bandgap due to Ge and heavy doping, is presented.

Original language	English (US)
Title of host publication	Technical Digest - International Electron Devices Meeting
Editors	Anon
Publisher	Publ by IEEE
Pages	87-90
Number of pages	4
ISBN (Print)	0780314506
State	Published - Dec 1 1993
Event	Proceedings of the 1993 IEEE International Electron Devices Meeting - Washington, DC, USA Duration: Dec 5 1993 → Dec 8 1993

Publication series

Name	Technical Digest - International Electron Devices Meeting
ISSN (Print)	0163-1918

Other

Other	Proceedings of the 1993 IEEE International Electron Devices Meeting
City	Washington, DC, USA
Period	12/5/93 → 12/8/93

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Cite this

@inproceedings{cd0e347a4b2d492abbd57d8d08ea0283,

title = "Comprehensive study of lateral and vertical current transport in Si/ Si1-xGex/Si HBT's",

abstract = "We studied the effects of heavy doping and Ge concentration in the base on the dc performance of Si/Si1-xGex/Si npn HBT's. The lateral drift mobility of holes in heavily doped epitaxial SiGe bases is found to be lower than bulk Si values and independent of Ge content, and the Hall scattering factor is less than unity and decreases with increasing Ge concentration. For the vertical electron transport we have observed bandgap narrowing due to heavy base doping which is, to first order, independent of Ge concentration. Finally, a model for the collector current enhancement with respect of Si devices, including the effects of reduced density of states in the strained Si1-xGex base and the effective bandgap due to Ge and heavy doping, is presented.",

author = "Z. Matutinovic-Krstelj and V. Venkataraman and Prinz, {E. J.} and Sturm, {J. C.} and Magee, {C. W.}",

year = "1993",

month = dec,

day = "1",

language = "English (US)",

isbn = "0780314506",

series = "Technical Digest - International Electron Devices Meeting",

publisher = "Publ by IEEE",

pages = "87--90",

editor = "Anon",

booktitle = "Technical Digest - International Electron Devices Meeting",

note = "Proceedings of the 1993 IEEE International Electron Devices Meeting ; Conference date: 05-12-1993 Through 08-12-1993",

}

Matutinovic-Krstelj, Z, Venkataraman, V, Prinz, EJ, Sturm, JC & Magee, CW 1993, Comprehensive study of lateral and vertical current transport in Si/ Si_1-xGe_x/Si HBT's. in Anon (ed.), Technical Digest - International Electron Devices Meeting. Technical Digest - International Electron Devices Meeting, Publ by IEEE, pp. 87-90, Proceedings of the 1993 IEEE International Electron Devices Meeting, Washington, DC, USA, 12/5/93.

Comprehensive study of lateral and vertical current transport in Si/ Si_1-xGe_x/Si HBT's. / Matutinovic-Krstelj, Z.; Venkataraman, V.; Prinz, E. J. et al.

Technical Digest - International Electron Devices Meeting. ed. / Anon. Publ by IEEE, 1993. p. 87-90 (Technical Digest - International Electron Devices Meeting).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Comprehensive study of lateral and vertical current transport in Si/ Si1-xGex/Si HBT's

AU - Matutinovic-Krstelj, Z.

AU - Venkataraman, V.

AU - Prinz, E. J.

AU - Sturm, J. C.

AU - Magee, C. W.

PY - 1993/12/1

Y1 - 1993/12/1

N2 - We studied the effects of heavy doping and Ge concentration in the base on the dc performance of Si/Si1-xGex/Si npn HBT's. The lateral drift mobility of holes in heavily doped epitaxial SiGe bases is found to be lower than bulk Si values and independent of Ge content, and the Hall scattering factor is less than unity and decreases with increasing Ge concentration. For the vertical electron transport we have observed bandgap narrowing due to heavy base doping which is, to first order, independent of Ge concentration. Finally, a model for the collector current enhancement with respect of Si devices, including the effects of reduced density of states in the strained Si1-xGex base and the effective bandgap due to Ge and heavy doping, is presented.

AB - We studied the effects of heavy doping and Ge concentration in the base on the dc performance of Si/Si1-xGex/Si npn HBT's. The lateral drift mobility of holes in heavily doped epitaxial SiGe bases is found to be lower than bulk Si values and independent of Ge content, and the Hall scattering factor is less than unity and decreases with increasing Ge concentration. For the vertical electron transport we have observed bandgap narrowing due to heavy base doping which is, to first order, independent of Ge concentration. Finally, a model for the collector current enhancement with respect of Si devices, including the effects of reduced density of states in the strained Si1-xGex base and the effective bandgap due to Ge and heavy doping, is presented.

UR - http://www.scopus.com/inward/record.url?scp=0027855419&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0027855419&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0027855419

SN - 0780314506

T3 - Technical Digest - International Electron Devices Meeting

SP - 87

EP - 90

BT - Technical Digest - International Electron Devices Meeting

A2 - Anon, null

PB - Publ by IEEE

T2 - Proceedings of the 1993 IEEE International Electron Devices Meeting

Y2 - 5 December 1993 through 8 December 1993

ER -