TY - GEN
T1 - Comprehensive study of lateral and vertical current transport in Si/ Si1-xGex/Si HBT's
AU - Matutinovic-Krstelj, Z.
AU - Venkataraman, V.
AU - Prinz, E. J.
AU - Sturm, J. C.
AU - Magee, C. W.
PY - 1993/12/1
Y1 - 1993/12/1
N2 - We studied the effects of heavy doping and Ge concentration in the base on the dc performance of Si/Si1-xGex/Si npn HBT's. The lateral drift mobility of holes in heavily doped epitaxial SiGe bases is found to be lower than bulk Si values and independent of Ge content, and the Hall scattering factor is less than unity and decreases with increasing Ge concentration. For the vertical electron transport we have observed bandgap narrowing due to heavy base doping which is, to first order, independent of Ge concentration. Finally, a model for the collector current enhancement with respect of Si devices, including the effects of reduced density of states in the strained Si1-xGex base and the effective bandgap due to Ge and heavy doping, is presented.
AB - We studied the effects of heavy doping and Ge concentration in the base on the dc performance of Si/Si1-xGex/Si npn HBT's. The lateral drift mobility of holes in heavily doped epitaxial SiGe bases is found to be lower than bulk Si values and independent of Ge content, and the Hall scattering factor is less than unity and decreases with increasing Ge concentration. For the vertical electron transport we have observed bandgap narrowing due to heavy base doping which is, to first order, independent of Ge concentration. Finally, a model for the collector current enhancement with respect of Si devices, including the effects of reduced density of states in the strained Si1-xGex base and the effective bandgap due to Ge and heavy doping, is presented.
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M3 - Conference contribution
AN - SCOPUS:0027855419
SN - 0780314506
T3 - Technical Digest - International Electron Devices Meeting
SP - 87
EP - 90
BT - Technical Digest - International Electron Devices Meeting
A2 - Anon, null
PB - Publ by IEEE
T2 - Proceedings of the 1993 IEEE International Electron Devices Meeting
Y2 - 5 December 1993 through 8 December 1993
ER -