Comprehensive study of lateral and vertical current transport in Si/ Si1-xGex/Si HBT's

Z. Matutinovic-Krstelj, V. Venkataraman, E. J. Prinz, J. C. Sturm, C. W. Magee

Research output: Chapter in Book/Report/Conference proceedingConference contribution

8 Scopus citations

Abstract

We studied the effects of heavy doping and Ge concentration in the base on the dc performance of Si/Si1-xGex/Si npn HBT's. The lateral drift mobility of holes in heavily doped epitaxial SiGe bases is found to be lower than bulk Si values and independent of Ge content, and the Hall scattering factor is less than unity and decreases with increasing Ge concentration. For the vertical electron transport we have observed bandgap narrowing due to heavy base doping which is, to first order, independent of Ge concentration. Finally, a model for the collector current enhancement with respect of Si devices, including the effects of reduced density of states in the strained Si1-xGex base and the effective bandgap due to Ge and heavy doping, is presented.

Original languageEnglish (US)
Title of host publicationTechnical Digest - International Electron Devices Meeting
Editors Anon
PublisherPubl by IEEE
Pages87-90
Number of pages4
ISBN (Print)0780314506
StatePublished - Dec 1 1993
EventProceedings of the 1993 IEEE International Electron Devices Meeting - Washington, DC, USA
Duration: Dec 5 1993Dec 8 1993

Publication series

NameTechnical Digest - International Electron Devices Meeting
ISSN (Print)0163-1918

Other

OtherProceedings of the 1993 IEEE International Electron Devices Meeting
CityWashington, DC, USA
Period12/5/9312/8/93

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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  • Cite this

    Matutinovic-Krstelj, Z., Venkataraman, V., Prinz, E. J., Sturm, J. C., & Magee, C. W. (1993). Comprehensive study of lateral and vertical current transport in Si/ Si1-xGex/Si HBT's. In Anon (Ed.), Technical Digest - International Electron Devices Meeting (pp. 87-90). (Technical Digest - International Electron Devices Meeting). Publ by IEEE.