Composition dependent band gap variations of Ga xIn 1-xP ySb zAs 1-y-z lattice matched to different substrates

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Abstract

The electronic band structure of the pentanary alloy Ga xIn 1-xP ySb zAs 1-y-z is calculated using the universal tight binding (UTB) model based on a modified pseudo-cell (MPC). The lattice matching condition for a substrate is obtained by optimizing the bond length of the alloy to that of the substrate. The principal band gaps (E(Γ), E(L), E(X)) of the alloy lattice matched to different substrates (GaAs, InP, InAs, and GaSb) are calculated. The alloy Ga xIn 1-xP ySb zAs 1-y-z is found to provide more diverse opportunities to achieve desired band gaps while still maintaining the lattice matching conditions by controlling the composition components.

Original languageEnglish (US)
JournalJournal of the Korean Physical Society
Volume34
Issue numberSUPPL. 1
StatePublished - Dec 1 1999

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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