Abstract
In this letter, we show the ability, through introduction of a thin Si1-x-yGexCy layer, to eliminate the enhancement of enhanced boron diffusion in silicon due to an oxidizing surface or ion implant damage. This reduction of diffusion is accomplished through a low-temperature-grown thin epitaxial Si1-x-yGexCy layer which completely filters out excess interstitials introduced by oxidation or ion implant damage. We also quantify the oxidation-enhanced diffusion (OED) and transient-enhanced diffusion (TED) dependence on substitutional carbon level, and further report both the observation of carbon TED and OED, and its dependence on carbon levels.
Original language | English (US) |
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Pages (from-to) | 3695-3697 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 73 |
Issue number | 25 |
DOIs | |
State | Published - 1998 |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)