Complementary metal-oxide-semiconductor thin-film transistor circuits from a high-temperature polycrystalline silicon process on steel foil substrates

Keyphrases

• High Temperature 100%
• Silica 100%
• Foil Substrate 100%
• Steel Foil 100%
• Self-aligned 100%
• Polysilicon 100%
• Silicon Processing 100%
• Transistor Circuits 100%
• Complementary Metal Oxide Semiconductor 100%
• Oxide Thin-film Transistors 100%
• Thin-film Transistors 66%
• Silicon Circuits 66%
• Complementary Metal-oxide-silicon 66%
• Backplane 33%
• Flexible Substrate 33%
• Large-area Electronics 33%
• Gate Dielectric 33%
• Non-self 33%
• Circuitry 33%
• Processing Temperature 33%
• Thermal Oxidation 33%
• Crystallization Kinetics 33%
• Silicon Crystallization 33%
• Thick Steel 33%
• Ring Oscillator 33%
• Oscillator Frequency 33%
• Field-effect Mobility 33%
• Polycrystalline Silicon Films 33%

Engineering

• Complementary Metal-Oxide-Semiconductor 100%
• Silicon Dioxide 100%
• Polysilicon 100%
• Thin film transistors 100%
• Silicon Oxide 66%
• Frequency Oscillator 33%
• Flexible Substrate 33%
• Thermal Oxidation 33%
• Gate Dielectric 33%

Material Science

• Silicon 100%
• Thin-Film Transistor 100%
• Electronic Circuit 100%
• Complementary Metal-Oxide-Semiconductor Device 100%
• Metal Oxide 33%
• Film 16%
• Dielectric Material 16%