Complementary metal-oxide-semiconductor thin-film transistor circuits from a high-temperature polycrystalline silicon process on steel foil substrates

Ming Wu, Xiang Zheng Bo, James C. Sturm, Sigurd Wagner

Research output: Contribution to journalArticle

50 Scopus citations

Abstract

We fabricated CMOS circuits from polycrystalline silicon films on steel foil substrates at process temperatures up to 950 °C. The substrates were 0.2-mm thick steel foil coated with 0.5-μm thick SiO2. We employed silicon crystallization times ranging from 6 h (600 °C) to 20 s (950 °C). Thin-film transistors (TFTs) were made in either self-aligned or non-self-aligned geometries. The gate dielectric was SiO2 made by thermal oxidation or from deposited SiO2. The field-effect mobilities reach 64 cm2/Vs for electrons and 22 cm2/Vs for holes. Complementary metal-oxide-silicon (CMOS) circuits were fabricated with self-aligned TFT geometries, and exhibit ring oscillator frequencies of 1 MHz. These results lay the groundwork for polycrystalline silicon circuitry on flexible substrates for large-area electronic backplanes.

Original languageEnglish (US)
Pages (from-to)1993-2000
Number of pages8
JournalIEEE Transactions on Electron Devices
Volume49
Issue number11
DOIs
StatePublished - Nov 1 2002

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Keywords

  • Complementary metal-oxide-semiconductor devices (CMOS)
  • Thin-film circuits
  • Thin-film transistors (TFTs)

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