Abstract
In this Rapid Communication we present the results from two high-quality, low-density GaAs quantum wells. In sample A of electron density n = 5.0 × 1010 cm-2, anisotropic electronic transport behavior was observed at ν = 7/2 in the second Landau level. We believe that the anisotropy is due to the large Landau level mixing effect in this sample. In sample B of density 4.1 × 1010 cm-2, strong 8/3, 5/2, and 7/3 fractional quantum Hall states were observed. Furthermore, our energy gap data suggest that, similar to the 8/3 state, the 5/2 state may also be spin unpolarized in the low-density limit. The results from both samples show that the strong electron-electron interactions and a large Landau level mixing effect play an import role in the competing ground states in the second Landau level.
Original language | English (US) |
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Article number | 241302 |
Journal | Physical Review B - Condensed Matter and Materials Physics |
Volume | 89 |
Issue number | 24 |
DOIs | |
State | Published - Jun 9 2014 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics