@inproceedings{e9fc134520b8431cba90bcf180a061fc,
title = "Comparison of high mobility AlGaN/GaN heterostructures grown by MBE on HVPE GaN templates and directly nucleated on sapphire",
abstract = "We compare molecular beam epitaxy growth of high electron mobility AlGaN/GaN heterostructures grown homoepitaxially on semi-insulating (SI) GaN templates prepared by hydride vapor phase epitaxy (HVPE) with structures grown completely by MBE on sapphire substrates. The quality of our MBE grown AlGaN/GaN heterostructures on HVPE templates has been proven by a record low temperature two-dimensional electron gas (2DEG) mobility of 75,000 cm2/Vs at T=4.2 K. Recently, we have developed Zn-compensated HVPE GaN templates that are highly resistive at room temperature (ρ∼108Ωcm). MBE grown heterostructures grown on SI HVPE GaN are electrically isolated from the substrate at all temperatures from 300 K down to T=4.2 K. We report on the first high electron mobility transistors (HEMTs) grown by MBE on a HVPE GaN template.",
author = "Manfra, \{M. J.\} and Weimann, \{N. G.\} and Hsu, \{J. W.P.\} and Pfeiffer, \{L. N.\} and West, \{K. W.\} and Molnar, \{R. J.\}",
note = "Publisher Copyright: {\textcopyright} 2002 IEEE.; 12th International Conference on Molecular Beam Epitaxy, MBE 2002 ; Conference date: 15-09-2002 Through 20-09-2002",
year = "2002",
doi = "10.1109/MBE.2002.1037844",
language = "English (US)",
series = "MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "231--232",
booktitle = "MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy",
address = "United States",
}