Abstract
The coherent THz emission from cavity polaritons in a semiconductor microcavity, which consists of three 108 angstroms/102 angstroms GaAs/AlAs quantum wells, was examined. The sample exhibited a Rabi splitting of 5.7 meV at normal incidence at T = 4 K. The spectral sample design and large Rabi splitting made the observation of cavity polaritons from 4 K up to room temperature possible. A short laser pulse excited the sample with an incident photon density of <6·1010 photons/cm2, which is much smaller than the saturation density of the cavity polariton doublet. Three measurements were carried out simultaneously: coherent THz detection; time-resolved upconversion of the reflected beam; and spectral analysis of the reflection.
| Original language | English (US) |
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| Pages | 218 |
| Number of pages | 1 |
| State | Published - 1999 |
| Externally published | Yes |
| Event | Proceedings of the 1999 Quantum Electronics and Laser Science Conference (QELS '99) - Baltimore, MD, USA Duration: May 23 1999 → May 28 1999 |
Other
| Other | Proceedings of the 1999 Quantum Electronics and Laser Science Conference (QELS '99) |
|---|---|
| City | Baltimore, MD, USA |
| Period | 5/23/99 → 5/28/99 |
All Science Journal Classification (ASJC) codes
- General Physics and Astronomy