Coherent optical transitions in implanted nitrogen vacancy centers

Y. Chu; N. P. De Leon; B. J. Shields; B. Hausmann; R. Evans; E. Togan; M. J. Burek; M. Markham; A. Stacey; A. S. Zibrov; A. Yacoby; D. J. Twitchen; M. Loncar; H. Park; P. Maletinsky; M. D. Lukin

doi:10.1021/nl404836p

Coherent optical transitions in implanted nitrogen vacancy centers

Y. Chu, N. P. De Leon, B. J. Shields, B. Hausmann, R. Evans, E. Togan, M. J. Burek, M. Markham, A. Stacey, A. S. Zibrov, A. Yacoby, D. J. Twitchen, M. Loncar, H. Park, P. Maletinsky, M. D. Lukin

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181 Scopus citations

Abstract

We report the observation of stable optical transitions in nitrogen-vacancy (NV) centers created by ion implantation. Using a combination of high temperature annealing and subsequent surface treatment, we reproducibly create NV centers with zero-phonon lines (ZPL) exhibiting spectral diffusion that is close to the lifetime-limited optical line width. The residual spectral diffusion is further reduced by using resonant optical pumping to maintain the NV^- charge state. This approach allows for placement of NV centers with excellent optical coherence in a well-defined device layer, which is a crucial step in the development of diamond-based devices for quantum optics, nanophotonics, and quantum information science.

Original language	English (US)
Pages (from-to)	1982-1986
Number of pages	5
Journal	Nano Letters
Volume	14
Issue number	4
DOIs	https://doi.org/10.1021/nl404836p
State	Published - Apr 9 2014
Externally published	Yes

All Science Journal Classification (ASJC) codes

General Chemistry
Condensed Matter Physics
Mechanical Engineering
Bioengineering
General Materials Science

Keywords

annealing
diamond
implantation
nitrogen vacancy center
spectral diffusion
surface treatment

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10.1021/nl404836p

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title = "Coherent optical transitions in implanted nitrogen vacancy centers",

abstract = "We report the observation of stable optical transitions in nitrogen-vacancy (NV) centers created by ion implantation. Using a combination of high temperature annealing and subsequent surface treatment, we reproducibly create NV centers with zero-phonon lines (ZPL) exhibiting spectral diffusion that is close to the lifetime-limited optical line width. The residual spectral diffusion is further reduced by using resonant optical pumping to maintain the NV- charge state. This approach allows for placement of NV centers with excellent optical coherence in a well-defined device layer, which is a crucial step in the development of diamond-based devices for quantum optics, nanophotonics, and quantum information science.",

keywords = "annealing, diamond, implantation, nitrogen vacancy center, spectral diffusion, surface treatment",

author = "Y. Chu and {De Leon}, {N. P.} and Shields, {B. J.} and B. Hausmann and R. Evans and E. Togan and Burek, {M. J.} and M. Markham and A. Stacey and Zibrov, {A. S.} and A. Yacoby and Twitchen, {D. J.} and M. Loncar and H. Park and P. Maletinsky and Lukin, {M. D.}",

year = "2014",

month = apr,

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doi = "10.1021/nl404836p",

language = "English (US)",

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pages = "1982--1986",

journal = "Nano Letters",

issn = "1530-6984",

publisher = "American Chemical Society",

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T1 - Coherent optical transitions in implanted nitrogen vacancy centers

AU - Chu, Y.

AU - De Leon, N. P.

AU - Shields, B. J.

AU - Hausmann, B.

AU - Evans, R.

AU - Togan, E.

AU - Burek, M. J.

AU - Markham, M.

AU - Stacey, A.

AU - Zibrov, A. S.

AU - Yacoby, A.

AU - Twitchen, D. J.

AU - Loncar, M.

AU - Park, H.

AU - Maletinsky, P.

AU - Lukin, M. D.

PY - 2014/4/9

Y1 - 2014/4/9

N2 - We report the observation of stable optical transitions in nitrogen-vacancy (NV) centers created by ion implantation. Using a combination of high temperature annealing and subsequent surface treatment, we reproducibly create NV centers with zero-phonon lines (ZPL) exhibiting spectral diffusion that is close to the lifetime-limited optical line width. The residual spectral diffusion is further reduced by using resonant optical pumping to maintain the NV- charge state. This approach allows for placement of NV centers with excellent optical coherence in a well-defined device layer, which is a crucial step in the development of diamond-based devices for quantum optics, nanophotonics, and quantum information science.

AB - We report the observation of stable optical transitions in nitrogen-vacancy (NV) centers created by ion implantation. Using a combination of high temperature annealing and subsequent surface treatment, we reproducibly create NV centers with zero-phonon lines (ZPL) exhibiting spectral diffusion that is close to the lifetime-limited optical line width. The residual spectral diffusion is further reduced by using resonant optical pumping to maintain the NV- charge state. This approach allows for placement of NV centers with excellent optical coherence in a well-defined device layer, which is a crucial step in the development of diamond-based devices for quantum optics, nanophotonics, and quantum information science.

KW - annealing

KW - diamond

KW - implantation

KW - nitrogen vacancy center

KW - spectral diffusion

KW - surface treatment

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DO - 10.1021/nl404836p

M3 - Article

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SN - 1530-6984

VL - 14

SP - 1982

EP - 1986

JO - Nano Letters

JF - Nano Letters

IS - 4

ER -

Coherent optical transitions in implanted nitrogen vacancy centers

Abstract

All Science Journal Classification (ASJC) codes

Keywords

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