@inproceedings{a239f795296f44c68ffaec11d0a4790b,
title = "Coherent intersubband oscillations in modulation-doped quantum wells",
abstract = "Summary form only given. We report on the observation of coherent intersubband beats in time-domain femtosecond experiments on a high-mobility two-dimensional electron gas. The sample is a 400-{\AA} one-sided modulation-doped GaAs-AlGaAs single quantum-well grown by molecular beam epitaxy. The top Al0.2Ga0.8As layer contains Si donors which are separated from the GaAs quantum well by a thick undoped space layer. The areal density of the electron gas at the interface is ρ ≈ 2 × 1011 cm-2 and the low-temperature mobility is 1.2 × 106 cm2/Vs. After removal of the substrate, pump-probe experiments were performed at ∼ 7 K in the transmission geometry using a modelocked Ti-sapphire laser. The central wavelength of the pulses was tuned to resonate with excitons associated with heavy-hole states at ∼ 800 nm.",
author = "J. Bao and R. Merlin and Pfeiffer, {L. N.} and West, {K. W.}",
note = "Publisher Copyright: {\textcopyright} 2001 Optical Soc. Of America.; Quantum Electronics and Laser Science Conference, QELS 2001 ; Conference date: 06-05-2001 Through 11-05-2001",
year = "2001",
doi = "10.1109/QELS.2001.962202",
language = "English (US)",
series = "Technical Digest - Summaries of Papers Presented at the Quantum Electronics and Laser Science Conference, QELS 2001",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "248--249",
booktitle = "Technical Digest - Summaries of Papers Presented at the Quantum Electronics and Laser Science Conference, QELS 2001",
address = "United States",
}