Coercive field and magnetization deficit in Ga1-xMnxAs epilayers

S. J. Potashnik, K. C. Ku, R. F. Wang, M. B. Stone, N. Samarth, P. Schiffer, S. H. Chun

Research output: Contribution to journalArticlepeer-review

34 Scopus citations


The field dependence of the magnetization in epilayers of the diluted magnetic semiconductor Ga1-xMnxAs for 0.0135<x<0.083 was discussed. It was suggested that the spin state of the nonferromagnetic Mn spins were energetically well separated from the ferromagnetism of the bulk of the spins. The analysis showed that Hc decreased with increasing Mn concentration as predicted theoretically.

Original languageEnglish (US)
Pages (from-to)6784-6786
Number of pages3
JournalJournal of Applied Physics
Issue number10 2
StatePublished - May 15 2003
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • General Physics and Astronomy


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