Abstract
The reaction of Co with epitaxial SiGeC/Si layers is investigated and compared to the reaction of Co with SiGe/Si layers. The sequence of phase formation is the same as the reaction of Co with monocrystalline Si, however, cobalt disilicide is formed at much higher temperatures. The presence of C further delays the disilicide formation, as a result of C accumulation at the suicide/substrate interface during the reaction, which blocks the Co diffusion paths. The CoSi2 layers thus formed exhibit a preferential (h00) orientation. The slow supply of Co atoms to the silicide/Si interface, due to the blocking of Co diffusion paths by Ge and C, is believed to be the reason for this epitaxial alignment.
Original language | English (US) |
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Pages (from-to) | 1266-1268 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 70 |
Issue number | 10 |
DOIs | |
State | Published - Mar 10 1997 |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)