Co silicide formation on SiGeC/Si and SiGe/Si layers

R. A. Donaton, K. Maex, A. Vantomme, G. Langouche, Y. Morciaux, A. St. Amour, J. C. Sturm

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Abstract

The reaction of Co with epitaxial SiGeC/Si layers is investigated and compared to the reaction of Co with SiGe/Si layers. The sequence of phase formation is the same as the reaction of Co with monocrystalline Si, however, cobalt disilicide is formed at much higher temperatures. The presence of C further delays the disilicide formation, as a result of C accumulation at the suicide/substrate interface during the reaction, which blocks the Co diffusion paths. The CoSi2 layers thus formed exhibit a preferential (h00) orientation. The slow supply of Co atoms to the silicide/Si interface, due to the blocking of Co diffusion paths by Ge and C, is believed to be the reason for this epitaxial alignment.

Original languageEnglish (US)
Pages (from-to)1266-1268
Number of pages3
JournalApplied Physics Letters
Volume70
Issue number10
DOIs
StatePublished - Mar 10 1997

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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    Donaton, R. A., Maex, K., Vantomme, A., Langouche, G., Morciaux, Y., St. Amour, A., & Sturm, J. C. (1997). Co silicide formation on SiGeC/Si and SiGe/Si layers. Applied Physics Letters, 70(10), 1266-1268. https://doi.org/10.1063/1.118548